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IRF640TのメーカーはST Microelectronicsです、この部品の機能は「N-CHANNEL POWER MOSFETS」です。 |
部品番号 | IRF640T |
| |
部品説明 | N-CHANNEL POWER MOSFETS | ||
メーカ | ST Microelectronics | ||
ロゴ | |||
このページの下部にプレビューとIRF640Tダウンロード(pdfファイル)リンクがあります。 Total 12 pages
www.DataSheet4U.com
IRF640T
N-channel 200V - 0.15Ω - 15A - TO-220
MESH OVERLAY™ Power MOSFET
General features
Type
VDSS
RDS(on)
IRF640T
200V <0.16Ω
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitances
ID
15A
Description
This Power MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAY™ process. This technology matches
and improves the performances compared with
standard parts from various sources.
Applications
■ Switching application
3
2
1
TO-220
Internal schematic diagram
Order codes
Part number
IRF640T
October 2006
DataSheet4 U .com
Marking
IRF640T
Package
TO-220
Rev 1
Packaging
Tube
1/12
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IRF640T
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
VGS
ID
ID
IDM(1)
PTOT
dv/dt(2)
Drain-source voltage (VGS = 0)
Gate-source voltage
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC=100°C
Drain current (pulsed)
Total dissipation at TC = 25°C
Derating factor
Peak diode recovery voltage slope
TJ Operating junction temperature
Tstg Storage temperature
1. Pulse width limited by safe operating area
2. ISD ≤15A, di/dt ≤300A/µs, VDD =80%V(BR)DSS
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Rthj-a
Tl
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering purpose
Table 3. Avalanche data
Symbol
Parameter
Avalanche curent, repetitive or not-repetitive
IAR (pulse width limited by Tj Max)
Single pulse avalanche energy
EAS (starting Tj=25°C, Id=Iar, Vdd=50V)
Electrical ratings
Value
200
± 20
15
10
60
90
0.72
15
-55 to 150
Unit
V
V
A
A
A
W
W/°C
V/ns
°C
Value
1.38
62.5
300
Unit
°C/W
°C/W
°C
Value
15
110
Unit
A
mJ
DataSheet4 U .com
Rev 1
3/12
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Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area
Figure 2. Thermal impedance
IRF640T
Figure 3. Output characteristics
Figure 4. Transfer characteristics
Figure 5. Static drain-source on resistance Figure 6. Normalized BVDSS vs temperature
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Rev 1
6 Page | |||
ページ | 合計 : 12 ページ | ||
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PDF ダウンロード | [ IRF640T データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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