|
|
PDF IRHY7130CM Data sheet ( Hoja de datos )
| Número de pieza | IRHY7130CM | |
| Descripción | RADIATION HARDENED POWER MOSFET THRU-HOLE | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRHY7130CM (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
PD - 91274D
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
IRHY7130CM
JANSR2N7380
100V, N-CHANNEL
REF: MIL-PRF-19500/614
RAD-Hard™HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHY7130CM 100K Rads (Si)
IRHY3130CM 300K Rads (Si)
IRHY4130CM 600K Rads (Si)
IRHY8130CM 1000K Rads (Si)
RDS(on)
0.18Ω
0.18Ω
0.18Ω
0.18Ω
ID
14.4A
14.4A
14.4A
14.4A
QPL Part Number
JANSR2N7380
JANSF2N7380
JANSG2N7380
JANSH2N7380
TO-257AA
International Rectifier’s RADHard HEXFET® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rds(on) and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Absolute Maximum Ratings
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Light Weight
Pre-Irradiation
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Units
Continuous Drain Current
Continuous Drain Current
14.4
9.1 A
Pulsed Drain Current ➀
58
Max. Power Dissipation
75 W
Linear Derating Factor
0.6 W/°C
Gate-to-Source Voltage
±20 V
Single Pulse Avalanche Energy ➁
150
mJ
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
—A
— mJ
6.0 V/ns
Operating Junction
-55 to 150
Storage Temperature Range
oC
Lead Temperature
300 ( 0.063 in.(1.6mm) from case for 10s)
Weight
7.0 (Typical )
g
For footnotes refer to the last page
www.irf.com
1
12/17/01
1 page  
Pre-Irradiation
IRHY7130CM
2000
1500
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1000
Ciss
500
0
1
Coss
Crss
10
VDS , Drain-to-Source Voltage (V)
100
20 ID = 14 A
16
12
VDS = 80V
VDS = 50V
VDS = 20V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 10 20 30 40 50 60
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
TJ = 150° C
10
TJ = 25° C
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
1
0.1
0.0
VGS = 0 V
0.5 1.0 1.5 2.0 2.5
VSD ,Source-to-Drain Voltage (V)
100us
10
1ms
TC = 25°C
TJ = 150° C
Single Pulse
1
1 10
10ms
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
Fig 8. Maximum Safe Operating Area
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRHY7130CM.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRHY7130CM | RADIATION HARDENED POWER MOSFET THRU-HOLE | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |