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PDF IRHY593034CM Data sheet ( Hoja de datos )
| Número de pieza | IRHY593034CM | |
| Descripción | RADIATION HARDENED POWER MOSFET THRU-HOLE | |
| Fabricantes | International Rectifier | |
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PD - 94663A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
Product Summary
Part Number Radiation Level RDS(on) ID
IRHY597034CM 100K Rads (Si) 0.095Ω -18A*
IRHY593034CM 300K Rads (Si) 0.095Ω -18A*
IRHY597034CM
60V, P-CHANNEL
5 TECHNOLOGY
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
T0-257AA
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
-18*
-12.5
A
-72
75 W
0.6 W/°C
±20 V
120 mJ
-18 A
7.5 mJ
-5.3 V/ns
-55 to 150
oC
300 (0.063in/1.6mm from case for 10s )
4.3 ( Typical )
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
05/31/05
1 page  
Pre-Irradiation
IRHY597034CM
2500
2000
1500
1000
VCCGirsssSs
=
=
=
0V,
CCggsd
+
f=
Cgd
1MHz
, Cds
SHORTED
Coss = Cds + Cgd
Ciss
Coss
500
0
1
Crss
10 100
-VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = -18A
16
VDS =-48V
VDS =-30V
12
8
4
FOR TEST CIRCUIT
0 SEE FIGURE 13
0 10 20 30 40 50 60
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10 TJ = 150°C
1
TJ = 25°C
0.1
0.0
VGS = 0V
1.0 2.0 3.0 4.0 5.0
-VSD , Source-to-Drain Voltage (V)
6.0
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1000
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µs
10
Tc = 25°C
Tj = 150°C
Single Pulse
1
1 10
1ms
10ms
100
-VDS , Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5
5 Page | ||
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| PDF Descargar | [ Datasheet IRHY593034CM.PDF ] | |
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