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IRHY58230CMのメーカーはInternational Rectifierです、この部品の機能は「RADIATION HARDENED POWER MOSFET THRU-HOLE」です。 |
部品番号 | IRHY58230CM |
| |
部品説明 | RADIATION HARDENED POWER MOSFET THRU-HOLE | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRHY58230CMダウンロード(pdfファイル)リンクがあります。 Total 8 pages
www.DataSheet4U.com
PD - 93827A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
Product Summary
Part Number Radiation Level
IRHY57230CM 100K Rads (Si)
IRHY53230CM 300K Rads (Si)
IRHY54230CM 600K Rads (Si)
IRHY58230CM 1000K Rads (Si)
RDS(on)
0.21Ω
0.21Ω
0.21Ω
0.26Ω
ID
12.5A
12.5A
12.5A
12.5A
IRHY57230CM
200V, N-CHANNEL
4# TECHNOLOGY
c
TO-257AA
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
12.5
8.0
50
75
0.6
A
W
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
±20
60
12.5
7.5
4.4
-55 to 150
V
mJ
A
mJ
V/ns
oC
Lead Temperature
Weight
300 (0.063in./1.6mm from case for 10sec)
4.3 ( Typical )
g
For footnotes refer to the last page
www.irf.com
1
1/30/2001
1 Page Radiation Characteristics
IRHY57230CM
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
Up to 600K Rads(Si)1 1000K Rads (Si)2 Units
Min Max Min Max
Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 200 — 200 — V
VGS(th) Gate Threshold Voltage
2.0 4.0
1.5 4.0
IGSS
IGSS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
— 100
— -100
— 100 nA
— -100
IDSS
Zero Gate Voltage Drain Current
RDS(on) Static Drain-to-Source ➃
— 10 — 10 µA
— 0.215 — 0.265 Ω
On-State Resistance (TO-3)
RDS(on) Static Drain-to-Source ➃
— 0.21 — 0.26 Ω
On-State Resistance (TO-257AA)
VSD Diode Forward Voltage ➃
— 1.2 — 1.2 V
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS=160V, VGS =0V
VGS = 12V, ID = 8.0A
VGS = 12V, ID = 8.0A
VGS = 0V, IS = 12.5A
1. Part numbers IRHY57230CM, IRHY53230CM and IRHY54230CM
2. Part number IRHY58230CM
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion LET
MeV/(mg/cm2))
Br 36.7
I 59.4
Au 82.3
Energy
(MeV)
309
341
350
Range
(µm) @VGS=0V @VGS=-5V
39.5 200 200
32.5 200 200
28.4 50 35
VDS (V)
@VGS=-10V
150
40
25
@VGS=-15V
150
35
—
@VGS=-20V
50
30
—
250
200
150
100
50
0
0
-5 -10 -15 -20
VGS
Br
I
Au
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
3Pages IRHY57230CM
Pre-Irradiation
14
12
10
8
6
4
2
0
25
50 75 100 125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
10
1 D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6 www.irf.com
6 Page | |||
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部品番号 | 部品説明 | メーカ |
IRHY58230CM | RADIATION HARDENED POWER MOSFET THRU-HOLE | International Rectifier |