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IRHMK597160 の電気的特性と機能

IRHMK597160のメーカーはInternational Rectifierです、この部品の機能は「RADIATION HARDENED POWER MOSFET SURFACE MOUNT」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRHMK597160
部品説明 RADIATION HARDENED POWER MOSFET SURFACE MOUNT
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRHMK597160 Datasheet, IRHMK597160 PDF,ピン配置, 機能
www.DataSheet4U.com
PD-96912
RADIATION HARDENED
IRHMK597160
POWER MOSFET
100V, N-CHANNEL
SURFACE MOUNT (Low-Ohmic TO-254AA)
5 TECHNOLOGY
™
Product Summary
Part Number Radiation Level
IRHMK597160 100K Rads (Si)
IRHMK593160 300K Rads (Si)
RDS(on)
0.05
0.05
ID
-45A*
-45A*
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
Low-Ohmic
TO-254AA Tabless
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pack. Mounting Surface Temp.
Weight
* Current is limited by package
For footnotes refer to the last page
www.irf.com
-45*
-30
-180
208
1.67
±20
480
-45
20.8
-6.0
-55 to 150
300 (for 5s)
3.7 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
g
1
12/24/04

1 Page





IRHMK597160 pdf, ピン配列
PRraed-IirartaiodniaCtiohnaracteristics
IRHMK597160
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
100K Rads(Si)1 300KRads(Si)2 Units
Test Conditions
Min Max Min Max
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source Ã
On-State Resistance (TO-3)
Static Drain-to-Source On-State Ã
Resistance(Low-OhmicTO-254AA)
-100
-2.0
-4.0
-100
100
-10
0.05
— 0.05
-100
-2.0
-5.0
-100
100
-10
0.05
0.05
V
nA
µA
VGS = 0V, ID = -1.0mA
VGS = VDS, ID = -1.0mA
VGS = -20V
VGS = 20 V
VDS = -80V, VGS =0V
VGS = -12V, ID = -30A
VGS = -12V, ID = -30A
VSD Diode Forward Voltage Ã
— -5.0 — -5.0 V
VGS = 0V, IS = -45A
1. Part number IRHMK597160
2. Part number IRHMK593160
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion LET
(MeV/(mg/cm2))
Br 37.9
I 59.7
Au 82.3
Energy
(MeV)
252.6
314
350
Range
VDS (V)
(µm)
33.1
@V-G1S0=00V @V-G1S0=05V @V-G1S0=010V @VG-S1=0105V @VG-S1=0107.5V
@VGS=20V
-100
30.5 -100
-100
-100
-100
-75
-25
28.4 -100 -100 -100 -30 —
-120
-100
-80
-60 Br
I
-40 Au
-20
0
0 5 10 15 20 25
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3


3Pages


IRHMK597160 電子部品, 半導体
IRHMK597160
Pre-Irradiation
50
LIMITED BY PACKAGE
40
30
20
10
0
25 50 75 100 125 150
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
-
+ VDD
Fig 10a. Switching Time Test Circuit
VGS
10%
td(on) tr
td(off) tf
90%
VDS
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.1 0.20
0.10
0.05
0.01 0.02
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
P DM
t1
t2
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.1 1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6 www.irf.com

6 Page



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部品番号部品説明メーカ
IRHMK597160

RADIATION HARDENED POWER MOSFET SURFACE MOUNT

International Rectifier
International Rectifier


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