|
|
IRGB4055PBFのメーカーはInternational Rectifierです、この部品の機能は「PDP TRENCH IGBT」です。 |
部品番号 | IRGB4055PBF |
| |
部品説明 | PDP TRENCH IGBT | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRGB4055PBFダウンロード(pdfファイル)リンクがあります。 Total 9 pages
PD - 97058B
PDP TRENCH IGBT IRGB4055PbF
Features
l Advanced Trench IGBT Technology
l Optimized for Sustain and Energy Recovery
circuits in PDP applications
l Low VCE(on) and Energy per Pulse (EPULSETM)
for improved panel efficiency
l High repetitive peak current capability
l Lead Free package
IRGS4055PbF
Key Parameters
VCE min
300
cV CE(ON) typ. @ 110A
IRP max @ TC= 25°C
TJ max
1.70
270
150
V
V
A
°C
C CC
G
E
n-channel
GCE
TO-220
IRGB4055DPbF
GCE
D2Pak
IRGS4055DPbF
G
Gate
C
Collector
E
Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes
advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area
which improve panel efficiency. Additional features are 150°C operating junction temperature and high
repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust
and reliable device for PDP applications.
Absolute Maximum Ratings
Parameter
VGE
IC @ TC = 25°C
IC @ TC = 100°C
IRP @ TC = 25°C
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Emitter Voltage
Continuous Collector Current, VGE @ 15V
Continuous Collector, VGE @ 15V
cRepetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
dJunction-to-Case
Case-to-Sink, Flat Greased Surface , TO-220
dJunction-to-Ambient, TO-220
dJunction-to-Ambient (PCB Mount) , D2Pak
www.irf.com
Max.
±30
f110
60
270
255
102
2.04
-40 to + 150
300
x x10lb in (1.1N m)
Typ.
–––
0.50
–––
–––
Max.
0.50
–––
62
40
Units
V
A
W
W/°C
°C
N
Units
°C/W
1
03/16/07
1 Page 200
Top
150
Bottom
100
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
50
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VCE (V)
Fig 1. Typical Output Characteristics @ 25°C
200
Top
150
Bottom
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
100
50
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VCE (V)
Fig 3. Typical Output Characteristics @ 125°C
300
TJ = 25°C
250
TJ = 150°C
200
150
100
50
0
0
10µs PULSE WIDTH
5 10
VGE, Gate-to-Emitter Voltage (V)
15
Fig 5. Typical Transfer Characteristics
www.irf.com
IRGB/S4055PbF
200
Top
150
Bottom
100
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
50
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V CE (V)
Fig 2. Typical Output Characteristics @ 75°C
200
Top
150
Bottom
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
100
50
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VCE (V)
Fig 4. Typical Output Characteristics @ 150°C
20
IC = 35A
15
TJ = 25°C
10 TJ = 150°C
5
0
5 10 15
VGE (V)
Fig 6. VCE(ON) vs. Gate Voltage
20
3
3Pages IRGB/S4055PbF
A
RG
B
RG
DRIVER
L
C
VCC
Ipulse
DUT
PULSE A
PULSE B
tST
Fig 16a. tst and EPULSE Test Circuit
Fig 16b. tst Test Waveforms
VCE
Energy
IC Current
0
L
DUT
VCC
1K
Fig 16c. EPULSE Test Waveforms
Fig. 17 - Gate Charge Circuit (turn-off)
6 www.irf.com
6 Page | |||
ページ | 合計 : 9 ページ | ||
|
PDF ダウンロード | [ IRGB4055PBF データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRGB4055PBF | PDP TRENCH IGBT | International Rectifier |