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IRGB4055PBF PDF Data sheet ( 特性 )

部品番号 IRGB4055PBF
部品説明 PDP TRENCH IGBT
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRGB4055PBF Datasheet, IRGB4055PBF PDF,ピン配置, 機能
PD - 97058B
PDP TRENCH IGBT IRGB4055PbF
Features
l Advanced Trench IGBT Technology
l Optimized for Sustain and Energy Recovery
circuits in PDP applications
l Low VCE(on) and Energy per Pulse (EPULSETM)
for improved panel efficiency
l High repetitive peak current capability
l Lead Free package
IRGS4055PbF
Key Parameters
VCE min
300
cV CE(ON) typ. @ 110A
IRP max @ TC= 25°C
TJ max
1.70
270
150
V
V
A
°C
C CC
G
E
n-channel
GCE
TO-220
IRGB4055DPbF
GCE
D2Pak
IRGS4055DPbF
G
Gate
C
Collector
E
Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes
advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area
which improve panel efficiency. Additional features are 150°C operating junction temperature and high
repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust
and reliable device for PDP applications.
Absolute Maximum Ratings
Parameter
VGE
IC @ TC = 25°C
IC @ TC = 100°C
IRP @ TC = 25°C
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Emitter Voltage
Continuous Collector Current, VGE @ 15V
Continuous Collector, VGE @ 15V
cRepetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
dJunction-to-Case
Case-to-Sink, Flat Greased Surface , TO-220
dJunction-to-Ambient, TO-220
dJunction-to-Ambient (PCB Mount) , D2Pak
www.irf.com
Max.
±30
f110
60
270
255
102
2.04
-40 to + 150
300
x x10lb in (1.1N m)
Typ.
–––
0.50
–––
–––
Max.
0.50
–––
62
40
Units
V
A
W
W/°C
°C
N
Units
°C/W
1
03/16/07

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