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PDF FGA90N30 Data sheet ( Hoja de datos )
| Número de pieza | FGA90N30 | |
| Descripción | PDP IGBT | |
| Fabricantes | Fairchild Semiconductor | |
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FGA90N30
300V PDP IGBT
Features
• High Current Capability
• Low saturation voltage: VCE(sat), Typ = 1.1V@ IC = 20A
• High Input Impedance
September 2006
Description
Employing Unified IGBT Technology, FGA90N30 provides low
conduction and switching loss. FGA90N30 offers the optimum
solution for PDP applications where low condution loss is
essential.
GCE
TO-3P
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Description
VCES
VGES
IC
ICM
PD
TJ
Tstg
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current (Note 1)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25°C
@ TC = 25°C
@ TC = 25°C
@ TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
(1) Repetitive test , pulse width = 100usec , Duty = 0.5
* Ic_pulse limited by max Tj
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJA
Parameter
Thermal Resistance, Junction-to-Case for IGBT
Thermal Resistance, Junction-to-Ambient
FGA90N30
300
± 30
90
220
219
87
-55 to +150
-55 to +150
300
Typ.
--
--
Max.
0.57
40
Units
V
V
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
FGA90N30 Rev. A
1
www.fairchildsemi.com
1 page  
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Typical Performance Characteristics (Continued)
Figure 13. Turn-On Characteristics vs.
Collector Current
Figure 14.Turn-Off Characteristics vs.
Collector Current
1000
C o m m o n E m itter
V = 15V, R = 10Ω
GE G
T = 25oC
C
T = 125oC
C
100
tr
td (o n )
10
0
20 40 60 80
C o lle c to r C u rre n t , Ic [A ]
100
1000
tf
100
td (off)
C o m m o n E m itte r
V = 15V, R = 10Ω
GE G
T = 25oC
C
T = 125oC
C
10
0 20 40 60 80
C o lle cto r C u rre n t , Ic [A ]
100
Figure 15. Switching Loss vs. Gate Resistance Figure 16.Switching Loss vs. Collector Current
1
E off
0.1 E on
0 .0 1
0
C o m m o n E m itte r
V = 200V, V = 15V
CC GE
I = 20A
C
T = 2 5oC
C
T = 125oC
C
20 40 60 80
G a te R e s ista n ce , R [Ω ]
G
100
10
1
E off
0 .1
0 .0 1
0
Eon
C o m m o n E m itte r
V = 15V, R = 10Ω
GE G
T = 25oC
C
T = 125oC
C
20 40 60 80
C o lle cto r C u rre n t , Ic [A ]
100
Figure 17. Turn-Off SOA Figure
1000
Safe O perating Area
V = 20V, T = 100oC
GE C
100
10
1
10 100
Collector-Em itter Voltage, V [V]
CE
1000
FGA90N30 Rev. A
5 www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FGA90N30.PDF ] | |
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