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PDF STC20DE90HP Data sheet ( Hoja de datos )
| Número de pieza | STC20DE90HP | |
| Descripción | Hybrid Emitter Switched Bipolar Transistor | |
| Fabricantes | ST Microelectronics | |
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STC20DE90HP
Hybrid emitter switched bipolar transistor
ESBT® 900 V - 20 A - 0.06 W
Preliminary Data
General features
Table 1. General features
VCS(ON)
IC
1.2 V
20 A
RCS(ON)
0.06 Ω
■ Low equivalent on resistance
■ Very fast-switch, up to 150 kHz
■ Squared RBSOA, up to 900 V
■ Very low CISS driven by RG = 47 Ω
■ In compliance with the 2002/93/EC European
Directive
TO247-4L HP
Description
The STC20DE90HP is manufactured in a hybrid
structure, using dedicated high voltage Bipolar
and low voltage MOSFET technologies, aimed to
providing the best performance in ESBT topology.
The STC20DE90HP is designed for use in power
supply forward converter and three-phase power
factor corrector applications.
Internal schematic diagrams
Applications
■ SMPS forward converter
■ Three-phase power factor corrector
Order codes
Part Number
STC20DE90HP
Marking
C20DE90HP
Package
TO247-4L HP
Packing
Tube
October 2006
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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STC20DE90HP
Electrical characteristics
Table 4.
Symbol
Electrical characteristics
Parameter
Test Conditions
Min. Typ. Max. Unit
VCS(dyn)
VCSW
Collector-source
dynamic voltage
(1µs)
VCC =VClamp =400V
VGS =10V
IC =10A
IB = 2A
RG =47Ω
tpeak =500ns
IBpeak =10A
Maximum collector-
source voltage switched RG =47Ω
without snubber
hFE =5
IC =20A
900
1
V
V
Note (1) Pulsed duration = 300 µs, duty cycle ≤1.5%
2.1 Electrical characteristics (curves)
Figure 1. Output characteristics
Figure 2. Dynamic collector-source
saturation voltage
Figure 3. DC current gain
Figure 4. Gate threshold voltage vs
temperature
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STC20DE90HP
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