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IXTH3N120 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXTH3N120
部品説明 High Voltage Power MOSFETs
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 



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IXTH3N120 Datasheet, IXTH3N120 PDF,ピン配置, 機能
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High Voltage
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt
Preliminary Data Sheet
IXTH 3N120
V
DSS
ID25
VDS(on)
= 1200 V
= 3A
= 4.5
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
3N120
3N110
3N120
3N110
1200
1100
1200
1100
V
V
V
V
Continuous
Transient
±20 V
±30 V
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
3A
12 A
3A
20 mJ
700 mJ
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 2
TC = 25°C
5
150
-55 to +150
150
-55 to +150
V/ns
W
°C
°C
°C
1.6 mm (0.063 in) from case for 10 s
300 °C
Mounting torque
1.13/10 Nm/lb.in.
6g
Test Conditions
VGS = 0 V, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 VDSS
VGS = 0 V
VGS = 10 V, ID = 0.5 ID25
Note 1
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
1200
2.5
V
4.5 V
±100 nA
TJ = 25°C
TJ = 125°C
25 µA
1 mA
4.5
TO-247
G
DS
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z Low RDS (on)
z Rated for unclamped Inductive load
Switching (UIS)
z Molding epoxies meet UL 94 V-0
flammability classification
Advantages
z Easy to mount
z Space savings
z High power density
© 2003 IXYS All rights reserved
DS99025(03/03)

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High Voltage Power MOSFETs

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