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IXTH35N30 の電気的特性と機能

IXTH35N30のメーカーはIXYS Corporationです、この部品の機能は「(IXTH35N30 / IXTH40N30) MegaMOSTMFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXTH35N30
部品説明 (IXTH35N30 / IXTH40N30) MegaMOSTMFET
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




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IXTH35N30 Datasheet, IXTH35N30 PDF,ピン配置, 機能
www.DataSheet4U.com
MegaMOSTMFET
IXTH 35N30
IXTH 40N30
IXTM 40N30
N-Channel Enhancement Mode
V
DSS
300 V
300 V
300 V
I
D25
35 A
40 A
40 A
R
DS(on)
0.10
0.085
0.088
Symbol
Test Conditions
Maximum Ratings
VDSS
V
DGR
VGS
VGSM
ID25
IDM
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
M
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
P
D
TJ
TJM
Tstg
Md
Weight
T
C
= 25°C
Mounting torque
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300 V
300 V
±20 V
±30 V
35N30
40N30
35N30
40N30
35 A
40 A
140 A
160 A
300 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
300 °C
Symbol
VDSS
V
GS(th)
IGSS
IDSS
R
DS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 250 µA
V
DS
=
V,
GS
I
D
=
250
µA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
V = 10 V, I = 0.5 I
IXTH35N30
GS D D25
IXTH40N30
IXTM40N30
Pulse test, t 300 µs, duty cycle d 2 %
300
2
V
4V
±100 nA
200 µA
1 mA
0.10
0.085
0.088
TO-247 AD (IXTH)
TO-204 AE (IXTM)
D (TAB)
G = Gate,
S = Source,
G
D
D = Drain,
TAB = Drain
Features
l International standard packages
l Low RDS (on) HDMOSTM process
l Rugged polysilicon gate cell structure
l Low package inductance (< 5 nH)
- easy to drive and to protect
l Fast switching times
Applications
l Switch-mode and resonant-mode
power supplies
l Motor controls
l Uninterruptible Power Supplies (UPS)
l DC choppers
Advantages
l Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
l Space savings
l High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
91535E(5/96)
1-4

1 Page





IXTH35N30 pdf, ピン配列
www.DataSheet4U.com
Fig. 1 Output Characteristics
80
70
TJ = 25°C
60
50
40
30
20
10
0
024
VGS = 10V
68
8V
7V
6V
5V
10 12 14
VDS - Volts
Fig. 3 RDS(on) vs. Drain Current
2.0
TJ = 25°C
1.8
1.6
1.4
VGS = 10V
1.2
VGS = 15V
1.0
0.8
0.6
0
20 40 60 80 100
ID - Amperes
120
Fig. 5 Drain Current vs.
Case Temperature
50
40N30
40
35N30
30
20
10
0
-50 -25 0 25 50 75 100 125 150
TC - Degrees C
© 2000 IXYS All rights reserved
IXTH 35N30 IXTH 40N30
IXTM 40N30
Fig. 2 Input Admittance
80
70
60
50
TJ = 25°C
40
30
20
10
0
0 1 2 3 4 5 6 7 8 9 10
VGS - Volts
Fig. 4 Temperature Dependence
of Drain to Source Resistance
2.50
2.25
2.00
1.75
1.50
1.25
ID = 20A
1.00
0.75
0.50
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
1.2
VGS(th)
1.1
BVDSS
1.0
0.9
0.8
0.7
0.6
0.5
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C
3-4


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部品番号部品説明メーカ
IXTH35N30

(IXTH35N30 / IXTH40N30) MegaMOSTMFET

IXYS Corporation
IXYS Corporation


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