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PDF IXTH30N50 Data sheet ( Hoja de datos )
| Número de pieza | IXTH30N50 | |
| Descripción | MegaMOS FET | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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MegaMOSTMFET
N-Channel Enhancement Mode
IXTH 30N50
VDSS = 500 V
ID (cont) =
30 A
RDS(on) = 0.17 Ω
Symbol
V
DSS
V DGR
V
GS
VGSM
ID25
I
DM
PD
TJ
TJM
Tstg
TL
Md
Weight
Test Conditions
T
J
= 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
T
C
=
25°C,
pulse
width
limited
by
T
JM
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
Mounting torque
Maximum Ratings TO-247 AD
500 V
500 V
±20 V
±30 V
30 A
120 A
360 W
-55 ... +150
°C
150 °C
-55 ... +150
°C
300 °C
1.13/10 Nm/lb.in.
6g
D (TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
z International standard package
JEDEC TO-247 AD
z Low R
HDMOSTM process
DS (on)
z Rugged polysilicon gate cell structure
z Fast switching times
Symbol
V
DSS
VGS(th)
IGSS
IDSS
R DS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V = 0 V, I = 5 mA
GS D
BVDSS temperature coefficient
VDS = VGS, ID = 250 µA
V temperature coefficient
GS(th)
VGS = ±20 VDC, VDS = 0
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 • ID25
30N50
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
500
.087
V
%/k
2
-0.25
4V
%/k
±100 nA
200 µA
3 mA
0.17 Ω
Applications
z Switch-mode and resonant-mode
power supplies
z Motor controls
z Uninterruptible Power Supplies (UPS)
z DC choppers
Advantages
z Easy to mount with 1 screw
(TO-247)
(isolated mounting screw hole)
z Space savings
z High power density
© 2002 IXYS All rights reserved
94569-E (8/02)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IXTH30N50.PDF ] | |
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