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IXFB38N100Q2のメーカーはIXYS Corporationです、この部品の機能は「HiPerFET TM Power MOSFETs」です。 |
部品番号 | IXFB38N100Q2 |
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部品説明 | HiPerFET TM Power MOSFETs | ||
メーカ | IXYS Corporation | ||
ロゴ | |||
このページの下部にプレビューとIXFB38N100Q2ダウンロード(pdfファイル)リンクがあります。 Total 4 pages
www.DataSheet4U.com
HiPerFETTM
IXFB38N100Q2
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low Intrinsic Rg
High dV/dt, Low trr
VDSS =
ID25 =
RDS(on)=
1000 V
38 A
0.25 Ω
t
rr
≤
300
ns
Symbol
VDSS
VDGR
VVGGSSM
IIDDM25
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Fc
Weight
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting Force
Maximum Ratings
1000
1000
± 30
± 40
38
152
38
60
5.0
20
V
V
V
V
A
A
A
mJ
J
V/ns
890 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
30...120/7.5...27 N/lb
10 g
Test Conditions
VGS = 0 V, ID = 1mA
VDS = VGS, ID =8 mA
VGS = ± 30 V, VDS = 0
VDS = VDSS
VGS = 0 V
VGS = 10 V, ID = 0.5 • ID25
Note 1
Characteristic Values
(TJ
=
25°C
unless otherwise specified)
min. typ. max.
1000
V
2.5 5.5 V
± 200 nA
TJ = 25°C
TJ = 125°C
50 μA
3 mA
0.25 Ω
PLUS 264TM (IXFB)
G
D
S
G = Gate
S = Source
(TAB)
D = Drain
TAB = Drain
Features
z Double metal process for low gate
resistance
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
z Fast intrinsic rectifier
Applications
z DC-DC converters
z Switched-mode and resonant-mode
power supplies, >500kHz switching
z DC choppers
z Pulsegeneration
z Laser drivers
Advantages
z PLUS 264TM package for clip or spring
mounting
z Space savings
z High power density
© 2005 IXYS All rights reserved
DS98949E(09/05)
1 Page www.DataSheet4U.com
Fig. 1. Output Characteristics
@ 25 Deg. C
20
VGS = 10V
16 9V
8V
12
7V
6V
8
5V
4
0
01 2345 67
VDS - Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
45
VGS = 10V
36 9V
8V
27 7V
6V
5V
18
9
0
0 5 10 15 20
VDS - Volts
25
Fig. 5. RDS(on) Normalized to ID25 Value
vs. ID
2.8
2.5 TJ = 125°C
2.2
1.9
1.6
1.3 TJ = 25°C
1
0.7
0
20 40 60
ID - Amperes
80
© 2005 IXYS All rights reserved
IXFB38N100Q2
Fig. 2. Extended Output Characteristics
@ 25 deg. C
75
VGS = 10V
60 9V
8V
7V
45
6V
30
5V
15
0
0 5 10 15 20 25
VDS - Volts
Fig. 4. RDS(on) Normalized to ID25 Value
vs. Junction Temperature
2.8
2.5
2.2
1.9
1.6 ID = 38A
1.3
1 ID = 19A
0.7
0.4
-50 -25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Drain Current vs. Case
Temperature
40
32
24
16
8
0
-50 -25
0 25 50 75 100 125 150
TC - Degrees Centigrade
3Pages | |||
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部品番号 | 部品説明 | メーカ |
IXFB38N100Q2 | HiPerFET TM Power MOSFETs | IXYS Corporation |