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IRLI3615のメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。 |
部品番号 | IRLI3615 |
| |
部品説明 | HEXFET Power MOSFET | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRLI3615ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
www.DataSheet4U.com
PD - 94390
IRLI3615
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
HEXFET® Power MOSFET
D
VDSS = 150V
RDS(on) = 0.085 Ω
G
ID = 14A
S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The TO-220 Fullpak eliminates the need for additional insulating hardware in
commercial-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100 micron mica barrier
with standard TO-220 product. The Fullpak is mounted to a heatsink using a
single clip or by a single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
14
9.8
56
45
0.30
±16
340
8.4
4.5
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
–––
–––
Max.
3.3
65
Units
°C/W
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1
01/30/02
1 Page www.DataSheet4U.com
100
TOP
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 2.7V
10
2.7V
100
TOP
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 2.7V
10
IRLI3615
2.7V
20µs PULSE WIDTH
TJ = 25 °C
1
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
20µs PULSE WIDTH
TJ = 175 °C
1
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
TJ = 25 °C
TJ = 175°C
10
V DS = 50V
20µs PULSE WIDTH
1
2.0 3.0 4.0 5.0 6.0 7.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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3.5 ID = 14A
3.0
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages www.DataSheet4U.com
IRLI3615
15V
VDS
L
D R IV E R
RG
20V
tp
D .U .T
IA S
0 .0 1Ω
+
- VD D
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
1000
TOP
ID
3.4A
5.9A
800 BOTTOM 8.4A
600
400
200
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
10 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
6
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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6 Page | |||
ページ | 合計 : 8 ページ | ||
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部品番号 | 部品説明 | メーカ |
IRLI3615 | HEXFET Power MOSFET | International Rectifier |
IRLI3615PBF | Power MOSFET ( Transistor ) | International Rectifier |