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IRFB3077PBF の電気的特性と機能

IRFB3077PBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFB3077PBF
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFB3077PBF Datasheet, IRFB3077PBF PDF,ピン配置, 機能
PD - 97047B
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Worldwide Best RDS(on) in TO-220
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
G
IRFB3077PbF
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
75V
2.8m:
3.3m:
ID (Silicon Limited) 210A c
S ID (Package Limited) 120A
D
S
D
G
TO-220AB
IRFB3077PbF
G
Gate
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
Pulsed Drain Current d
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dV/dt
Peak Diode Recovery f
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
Single Pulse Avalanche Energy e
Avalanche Current d
Repetitive Avalanche Energy g
Thermal Resistance
Symbol
Parameter
RθJC
RθCS
RθJA
Junction-to-Case k
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient jk
www.irf.com
D
Drain
S
Source
Max.
210c
150c
120
850
370
2.5
± 20
2.5
-55 to + 175
300
10lbxin (1.1Nxm)
200
See Fig. 14, 15, 22a, 22b,
Typ.
–––
0.50
–––
Max.
0.402
–––
62
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
5/2/11

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IRFB3077PBF pdf, ピン配列
1000
100
4.5V
TOP
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
IRFB3077PbF
4.5V
10
0.1
60μs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
TJ = 175°C
10 TJ = 25°C
1
2.0
VDS = 25V
60μs PULSE WIDTH
3.0 4.0 5.0 6.0 7.0
VGS, Gate-to-Source Voltage (V)
8.0
Fig 3. Typical Transfer Characteristics
16000
12000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
8000
4000
Coss
Crss
0
1 10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
www.irf.com
10
0.1
60μs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
2.5
ID = 75A
VGS = 10V
2.0
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
20
ID= 75A
16
12
VDS= 60V
VDS= 38V
VDS= 17V
8
4
0
0 40 80 120 160 200 240 280
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
3


3Pages


IRFB3077PBF 電子部品, 半導体
IRFB3077PbF
4.0
3.0
ID = 1.0A
ID = 1.0mA
ID = 250μA
2.0
1.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 16. Threshold Voltage Vs. Temperature
24
20
16
12
8
IF = 45A
VR = 64V
4 TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / μs)
Fig. 18 - Typical Recovery Current vs. dif/dt
400
24
20
16
12
8
IF = 30A
VR = 64V
4 TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / μs)
Fig. 17 - Typical Recovery Current vs. dif/dt
400
300
200
100
IF = 30A
VR = 64V
TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / μs)
Fig. 19 - Typical Stored Charge vs. dif/dt
300
200
100
IF = 45A
VR = 64V
TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / μs)
Fig. 20 - Typical Stored Charge vs. dif/dt
6 www.irf.com

6 Page



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部品番号部品説明メーカ
IRFB3077PBF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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