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PDF HCP10C60 Data sheet ( Hoja de datos )
| Número de pieza | HCP10C60 | |
| Descripción | Silicon Controlled Rectifier | |
| Fabricantes | ETC | |
| Logotipo |  |
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Shantou Huashan Electronic Devices Co.,Ltd.
HCP10C60
Silicon Controlled Rectifier
Features
* Repetitive Peak Off-State Voltage : 600V
* R.M.S On-State Current(IT(RMS)=10A)
* Low On-State Voltage (1.4V(Typ.)@ ITM)
* Non-isolated Type
General Description
Standard gate triggering SCR is suitable for the application where
requiring high bi-directional blocking voltage capability and also
suitable for over voltage protection,motor control cicuit in power
tool,inrush current limit circuit and heating control system.
Absolute Maximum Ratings Ta=25
Tstg Storage Temperature ------------------------------------------------------ 40~125
Tj Operating Junction Temperature ---------------------------------------------- 40~125
VDRM Repetitive Peak Off-State Voltage -------------------------------------------------------------------- 600V
IT RMS
R.M.S On-State Current 180ºConduction Angles ---------------------------------------- 10A
IT(AV)
Average On-State Current (Half Sine Wave : TC = 111 °C) ----------------------------------------6.4A
ITSM Surge On-State Current (1/2 Cycle, 60Hz, Sine Wave, Non-repetitive) -------------------------- 110A
I2t Circuit Fusing Considerations(t = 8.3ms) ------------------------------------------------------------ 60A2s
PGM Forward Peak Gate Power Dissipation (Ta=25 --------------------------------------------------- 5W
PG(AV)
Forward Average Gate Power Dissipation (Ta=25
--------------------------------- 0.5W
IFGM Forward Peak Gate Current -------------------------------------------------------------------------------- 2A
VRGM Reverse Peak Gate Voltage ------------------------------------------------------------------------------- 5V
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet HCP10C60.PDF ] | |
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