DataSheet.jp

02N120 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 02N120
部品説明 SKP02N120
メーカ Infineon Technologies
ロゴ Infineon Technologies ロゴ 



Total 14 pages
		

No Preview Available !

02N120 Datasheet, 02N120 PDF,ピン配置, 機能
www.DataSheet4U.net
SKP02N120
SKB02N120
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
40lower Eoff compared to previous generation
Short circuit withstand time – 10 µs
Designed for:
- Motor controls
- Inverter
- SMPS
NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
C
G
E
P-TO-220-3-1
(TO-220AB)
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
P-TO-263-3-2 (D²-PAK)
(TO-263AB)
Type
SKP02N120
SKB02N120
VCE
IC
Eoff
Tj Package
Ordering Code
1200V 2A 0.11mJ 150°C TO-220AB
Q67040-S4278
TO-263AB(D2PAK) Q67040-S4279
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 150°C
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time1)
VGE = 15V, 100VVCC1200V, Tj 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj , Tstg
-
Value
1200
6.2
2.8
9.6
9.6
Unit
V
A
4.5
2
9
±20
10
62
-55...+150
260
V
µs
W
°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Jul-02

1 Page





ページ 合計 : 14 ページ
PDF
ダウンロード
[ 02N120.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
02N120

SKP02N120

Infineon Technologies
Infineon Technologies

www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap