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IRFZ24NSPBF の電気的特性と機能

IRFZ24NSPBFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFZ24NSPBF
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFZ24NSPBF Datasheet, IRFZ24NSPBF PDF,ピン配置, 機能
www.DataSheet4U.com
PD - 95147
IRFZ24NS/LPbF
l Advanced Process Technology
l Surface Mount (IRFZ24NS)
l Low-profile through-hole (IRFZ24NL)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRFZ24NL) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V…
Continuous Drain Current, VGS @ 10V…
Pulsed Drain Current …
Power Dissipation
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚…
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ…
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
HEXFET® Power MOSFET
D VDSS = 55V
RDS(on) = 0.07
ID = 17A
S
D 2 Pak
T O -26 2
Max.
17
12
68
3.8
45
0.30
± 20
71
10
4.5
6.8
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
Max.
3.3
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
04/19/04
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1 Page





IRFZ24NSPBF pdf, ピン配列
www.DataSheet4U.com
IRFZ24NS/LPbF
1 0 0 VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5V
20µs PULSE W IDTH
1
TTCJ == 2255°°C
A
0.1 1
10 100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100 VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5V
20µs PULSE W IDTH
1
TTCJ == 117755°C
A
0.1 1
10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
TJ = 2 5 °C
TJ = 175°C
10
V DS= 25V
1
20µs PU LSE W ID TH
A
4 5 6 7 8 9 10
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
3.0 ID = 17A
2.5
2.0
1.5
1.0
0.5
0.0
-60
VGS = 10V A
-40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Tem perature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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3Pages


IRFZ24NSPBF 電子部品, 半導体
www.DataSheet4U.com
IRFZ24NS/LPbF
VDS
RG
10 V
tp
L
D.U.T.
IAS
0.01
+
- VDD
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
VDD
VDS
IAS
Fig 12b. Unclamped Inductive Waveforms
10 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
140 I D
TOP
4.2A
120 7.2A
BOTTOM 10A
100
80
60
40
20
0 VDD = 25V
25 50
75
A
100 125 150 175
Starting TJ , Junction Tem perature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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Link :


部品番号部品説明メーカ
IRFZ24NSPBF

HEXFET Power MOSFET

International Rectifier
International Rectifier


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