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IRHF9130 PDF Data sheet ( 特性 )

部品番号 IRHF9130
部品説明 TRANSISTOR P-CHANNEL
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRHF9130 Datasheet, IRHF9130 PDF,ピン配置, 機能
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PD - 90882F
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
IRHF9130
JANSR2N7389
100V, P-CHANNEL
REF: MIL-PRF-19500/630
RAD-HardHEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHF9130 100K Rads (Si)
IRHF93130 300K Rads (Si)
RDS(on)
0.30
0.30
ID QPL Part Number
-6.5A JANSR2N7389
-6.5A JANSF2N7389
International Rectifier’s RAD-Hard HEXFETTM technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rds(on) and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
TO-39
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n SimpleDriveRequirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
-6.5
-4.1 A
-26
25 W
0.2 W/°C
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
±20
165
-6.5
2.5
-22
V
mJ
A
mJ
V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
-55 to 150
300 ( 0.063 in. (1.6mm) from case for 10s)
oC
Weight
0.98 (typical)
g
For footnotes refer to the last page
www.irf.com
1
2/18/03
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