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PDF IRHF57234SE Data sheet ( Hoja de datos )
| Número de pieza | IRHF57234SE | |
| Descripción | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 93831A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
Product Summary
Part Number Radiation Level
IRHF57234SE 100K Rads (Si)
RDS(on)
0.42Ω
IRHF57234SE
JANSR2N7499T2
250V, N-CHANNEL
REF: MIL-PRF-19500/706
5 TECHNOLOGY
ID QPL Part Number
5.2A JANSR2N7499T2
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
TO-39
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Ratings
n Dynamic dv/dt Ratings
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
5.2
3.3 A
20.8
25 W
0.2 W/°C
±20 V
142 mJ
5.2 A
2.5 mJ
6.8
-55 to 150
V/ns
oC
300 ( 0.063 in./1.6mm from case for 10s)
0.98(Typical)
g
For footnotes refer to the last page
www.irf.com
1
06/16/04
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1 page  
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Pre-Irradiation
IRHF57234SE, JANSR2N7499T2
2000
1600
1200
800
400
VGS = 0V, f = 1MHz
CCCirossssss
=
=
=
CCCggdsds
+
+
Cgd
Cgd
,
Cds
SHORTED
Ciss
Coss
Crss
0
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 5.24A
15
VVVDDDSSS
=
=
=
200V
125V
50V
10
5
FOR TEST CIRCUIT
0 SEE FIGURE 13
0 10 20 30 40 50
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
TJ = 150° C
1
TJ = 25° C
0.1
0.4
VGS = 0 V
0.8 1.2 1.6 2.0
VSD ,Source-to-Drain Voltage (V)
2.4
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
10
100µs
1 1ms
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1.0 10
10ms
100 1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
5
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