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IRHF57230SE の電気的特性と機能

IRHF57230SEのメーカーはInternational Rectifierです、この部品の機能は「RADIATION HARDENED POWER MOSFET THRU-HOLE ( TO-39)」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRHF57230SE
部品説明 RADIATION HARDENED POWER MOSFET THRU-HOLE ( TO-39)
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRHF57230SE Datasheet, IRHF57230SE PDF,ピン配置, 機能
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PD - 93857B
IRHF57230SE
RADIATION HARDENED
POWER MOSFET
THRU-HOLE ( TO-39)
JANSR2N7498T2
200V, N CHANNEL
REF:MIL-PRF-19500/706
4#c TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHF57230SE 100K Rads (Si)
RDS(on)
0.24
ID QPL Part Number
7.0A JANSR2N7498T2
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
TO-39
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Ratings
n Dynamic dv/dt Ratings
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
7.0
4.5 A
28
25 W
0.2 W/°C
±20 V
130 mJ
7.0 A
2.5 mJ
4.2 V/ns
-55 to 150
oC
300 (0.063 in./1.6mm from case for 10s)
0.98 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
09/10/03
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IRHF57230SE pdf, ピン配列
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Radiation Characteristics
IRHF57230SE, JANSR2N7498T2
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source „
On-State Resistance (TO-3)
Static Drain-to-Source „
On-State Resistance (TO-39)
Diode Forward Voltage „
100K Rads (Si)
Min Max
200 —
2.0 4.5
— 100
— -100
— 10
— 0.222
— 0.24
— 1.5
Units
V
nA
µA
V
Test Conditions ˆ
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20V
VDS= 160V, VGS=0V
VGS = 12V, ID = 4.5A
VGS = 12V, ID = 4.5A
VGS = 0V, ID = 7.0A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion LET
MeV/(mg/cm2))
Br 36.7
I 59.8
Au 82.3
Energy
(MeV)
309
341
350
Range
(µm) @VGS=0V @VGS=-5V
39.5 200
200
32.5 200
200
28.4 200
200
VDS (V)
@VGS=-10V
200
200
150
@VGS=-15V
200
185
50
@VGS=-20V
200
120
25
250
200
150
100
50
0
0
-5 -10 -15 -20
VGS
Br
I
Au
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
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IRHF57230SE 電子部品, 半導体
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IRHF57230SE, JANSR2N498T2
Pre-Irradiation
8.0
6.0
4.0
2.0
0.0
25
50 75 100 125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
10
D = 0.50
1 0.20
0.10
0.05
0.02
0.1 0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
t1, Rectangular Pulse Duration (sec)
1
10
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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部品番号部品説明メーカ
IRHF57230SE

RADIATION HARDENED POWER MOSFET THRU-HOLE ( TO-39)

International Rectifier
International Rectifier


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