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IRHF54230 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRHF54230
部品説明 (IRHF5x230) RADIATION GARDENED POWER MOSFET THRU-HOLE (TO-39)
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRHF54230 Datasheet, IRHF54230 PDF,ピン配置, 機能
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PD - 93788A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
Product Summary
Part Number Radiation Level
IRHF57230 100K Rads (Si)
IRHF53230 300K Rads (Si)
IRHF54230 600K Rads (Si)
IRHF58230 1000K Rads (Si)
RDS(on)
0.22
0.22
0.22
0.275
ID
7.3A
7.3A
7.3A
7.3A
IRHF57230
200V, N-CHANNEL
4# TECHNOLOGY
c
TO-39
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Ratings
n Dynamic dv/dt Ratings
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
7.3
4.5 A
29
25 W
0.2 W/°C
±20 V
110 mJ
7.3 A
2.5 mJ
7.0
-55 to 150
V/ns
oC
300 (0.063 in./1.6mm from case for 10s)
0.98 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
07/15/02
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