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IRHF53130 の電気的特性と機能

IRHF53130のメーカーはInternational Rectifierです、この部品の機能は「(IRHF5x130) RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRHF53130
部品説明 (IRHF5x130) RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRHF53130 Datasheet, IRHF53130 PDF,ピン配置, 機能
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PD - 93789A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
Product Summary
Part Number Radiation Level
IRHF57130 100K Rads (Si)
IRHF53130 300K Rads (Si)
IRHF54130 600K Rads (Si)
IRHF58130 1000K Rads (Si)
RDS(on)
0.08
0.08
0.08
0.10
ID
11.7A
11.7A
11.7A
11.7A
IRHF57130
100V, N-CHANNEL
R5 TECHNOLOGY
™
TO-39
International Rectifier’s R5TM technology provides Features:
high performance power MOSFETs for space appli- n Single Event Effect (SEE) Hardened
cations. These devices have been characterized for n Ultra Low RDS(on)
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
n
n
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
of low RDS(on) and low gate charge reduces the power n Repetitive Avalanche Ratings
losses in switching applications such as DC to DC n Dynamic dv/dt Ratings
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
n
n
n
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
eters.
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current Œ
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy 
Avalanche Current Œ
Repetitive Avalanche Energy Œ
Peak Diode Recovery dv/dt Ž
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
11.7
7.4 A
47
25 W
0.2 W/°C
±20 V
173 mJ
11.7
A
2.5 mJ
4.9
-55 to 150
V/ns
oC
300 (0.063 in./1.6mm from case for 10s)
0.98 (Typical)
g
For footnotes refer to the last page
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1
3/2/00
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IRHF53130 pdf, ピン配列
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PRraed-IirartaiodniaCtiohnaracteristics
IRHF57130
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ‘
Parameter
Up to 600K Rads(Si)1 1000K Rads (Si)2 Units
Min Max Min Max
Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 100
VGS(th) Gate Threshold Voltage 
2.0 4.0
100 —
1.5 4.0
V
IGSS
IGSS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
— 100
— -100
— 100 nA
— -100
IDSS
Zero Gate Voltage Drain Current
RDS(on) Static Drain-to-Source 
— 10 — 10 µA
— 0.064 — 0.08
On-State Resistance (TO-3)
RDS(on) Static Drain-to-Source 
— 0.08 —
0.10
On-State Resistance (TO-39)
VSD Diode Forward Voltage 
— 1.5 — 1.5 V
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS= 80V, VGS =0V
VGS = 12V, ID =7.4A
VGS = 12V, ID =7.4A
VGS = 0V, IS = 11.7A
1. Part numbers IRHF57130, IRHF53130 and IRHF54130
2. Part number IRHF58130
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion LET
Energy
(MeV/(mg/cm2)) (MeV)
Br 36.7
309
I 59.8
341
Au 82.3
350
Range
(µm)
39.5
32.5
28.4
@VGS=0V @VGS=-5V
100 100
100 100
100 100
VDS (V)
@VGS=-10V
100
100
80
@VGS=-15V
100
35
25
@VGS=-20V
100
25
120
100
80
60
40
20
0
0
Br
I
Au
-5 -10 -15 -20
VDS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHF53130 電子部品, 半導体
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IRHF57130
Pre-Irradiation
12
10
8
6
4
2
0
25 50 75 100 125 150
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
12V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
10
D = 0.50
1 0.20
0.10
0.05
0.02
0.1 0.01
0.01
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.0001
0.001
0.01
0.1
t1, Rectangular Pulse Duration (sec)
1
10
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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部品番号部品説明メーカ
IRHF53130

(IRHF5x130) RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)

International Rectifier
International Rectifier


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