IRHF7130 Datasheet PDF - International Rectifier
| Part Number | IRHF7130 | |
| Description | (IRHFx130) RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) | |
| Manufacturers | International Rectifier | |
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PD - 90653E
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
Product Summary
IRHF7130
JANSR2N7261
100V, N-CHANNEL
REF: MIL-PRF-19500/601
RAD Hard™ HEXFET® TECHNOLOGY
Part Number Radiation Level
IRHF7130 100K Rads (Si)
IRHF3130 300K Rads (Si)
IRHF4130 600K Rads (Si)
IRHF8130 1000K Rads (Si)
RDS(on)
0.18Ω
0.18Ω
0.18Ω
0.18Ω
ID
8.0A
8.0A
8.0A
8.0A
QPL Part Number
JANSR2N7261
JANSF2N7261
JANSG2N7261
JANSH2N7261
TO-39
International Rectifier’s RADHard HEXFET® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
Units
8.0
5.0 A
32
25 W
0.20
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
±20
130
8.0
2.5
5.5
-55 to 150
300 ( 0.063 in.(1.6mm) from case for 10s)
0.98 (Typical )
V
mJ
A
mJ
V/ns
oC
g
For footnotes refer to the last page
www.irf.com
1
08/08/03
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Pores-tI-rIrraaddiiaattiioonn
IRHF7130
Fig 5. Typical Zero Gate Voltage Drain
Current Vs. Total Dose Exposure
Fig 6. Typical On-State Resistance Vs.
Neutron Fluence Level
Fig 8a. Gate Stress of
VGSS Equals 12 Volts During
Radiation
Fig 7. Typical Transient Response
of Rad Hard HEXFET During 1x1012
Rad (Si)/Sec Exposure
www.irf.com
DataSheet4 U .com
Fig 8b. VDSS Stress Equals
80% of BVDSS During Radiation
5
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IRHF7130 electronic component. |
| Information | Total 12 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ IRHF7130.PDF Datasheet ] | |
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