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IRHNJ57230 の電気的特性と機能

IRHNJ57230のメーカーはInternational Rectifierです、この部品の機能は「(IRHNJ5x230) RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRHNJ57230
部品説明 (IRHNJ5x230) RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRHNJ57230 Datasheet, IRHNJ57230 PDF,ピン配置, 機能
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PD - 93753A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
Product Summary
Part Number Radiation Level
IRHNJ57230 100K Rads (Si)
IRHNJ53230 300K Rads (Si)
IRHNJ54230 600K Rads (Si)
IRHNJ58230 1000K Rads (Si)
RDS(on)
0.20
0.20
0.20
0.25
ID
13A
13A
13A
13A
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low Rdson and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes refer to the last page
www.irf.com
IRHNJ57230
200V, N-CHANNEL
4# TECHNOLOGY
c
SMD-0.5
Features:
n Single Event Effect (SEE) Hardened
n Ultra low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
Pre-Irradiation
Units
13
8.2 A
52
75 W
0.6 W/°C
±20 V
60 mJ
13 A
7.5 mJ
4.4
-55 to 150
V/ns
oC
300 ( for 5s )
1.0 ( Typical )
g
1
07/22/02
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PRraed-IirartaiodniaCtiohnaracteristics
IRHNJ57230
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
Up to 600K Rads(Si)1 1000K Rads (Si)2 Units
Min Max Min Max
Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 200 — 200 — V
VGS(th) Gate Threshold Voltage
2.0 4.0
1.5 4.0
IGSS
IGSS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
— 100
— -100
— 100 nA
— -100
IDSS
Zero Gate Voltage Drain Current
RDS(on) Static Drain-to-Source
— 10 — 25 µA
— 0.204 — 0.255
On-State Resistance (TO-3)
RDS(on) Static Drain-to-Source
— 0.2 — 0.25
On-State Resistance (SMD-.5)
VSD Diode Forward Voltage
— 1.2 — 1.2 V
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS=160V, VGS =0V
VGS = 12V, ID = 8.2A
VGS = 12V, ID = 8.2A
VGS = 0V, IS = 13A
1. Part numbers IRHNJ57230, IRHNJ53230 and IRHNJ54230
2. Part number IRHNJ58230
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion LET
MeV/(mg/cm2))
Br 36.7
I 59.4
Au 82.3
Energy
(MeV)
309
341
350
Range
(µm) @VGS=0V @VGS=-5V
39.5 200 200
32.5 200 200
28.4 50 35
VDS (V)
@VGS=-10V
150
40
25
@VGS=-15V
150
35
@VGS=-20V
50
30
250
200
150
100
50
0
0
-5 -10 -15 -20
VGS
Br
I
Au
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
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IRHNJ57230 電子部品, 半導体
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IRHNJ57230
Pre-Irradiation
15
12
9
6
3
0
25 50 75 100 125 150
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
10
1 D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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部品番号部品説明メーカ
IRHNJ57230

(IRHNJ5x230) RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)

International Rectifier
International Rectifier


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