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PDF IRHNJ57130 Data sheet ( Hoja de datos )
| Número de pieza | IRHNJ57130 | |
| Descripción | (IRHNJ5x130) RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) | |
| Fabricantes | International Rectifier | |
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PD - 93754E
IRHNJ57130
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
Product Summary
Part Number Radiation Level RDS(on)
IRHNJ57130 100K Rads (Si) 0.06Ω
IRHNJ53130 300K Rads (Si) 0.06Ω
IRHNJ54130 600K Rads (Si) 0.06Ω
IRHNJ58130 1000K Rads (Si) 0.075Ω
ID
22A*
22A*
22A*
22A*
JANSR2N7481U3
100V, N-CHANNEL
REF: MIL-PRF-19500/703
4# TECHNOLOGY
c
QPL Part Number
JANSR2N7481U3
JANSF2N7481U3
JANSG2N7481U3
JANSH2N7481U3
SMD-0.5
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
Pre-Irradiation
Units
22*
16 A
88
75 W
0.6 W/°C
±20 V
70 mJ
22 A
7.5 mJ
1.4 V/ns
-55 to 150
oC
300 ( for 5s )
1.0 ( Typical )
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
10/24/03
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1 page  
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Pre-Irradiation
IRHNJ57130, JANSR2N7481U3
2000
1600
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1200 Ciss
800 Coss
400
0
1
Crss
10
VDS , Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 22A
15
VDS = 80V
VDS = 50V
VDS = 20V
10
5
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 10 20 30 40 50
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10 TJ = 150° C
1
TJ = 25° C
0.1
0.4
VGS = 0 V
0.6 0.8 1.0
VSD ,Source-to-Drain Voltage (V)
1.2
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
100µs
1ms
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1 10
10ms
100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5
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