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IRHNJ54034 の電気的特性と機能

IRHNJ54034のメーカーはInternational Rectifierです、この部品の機能は「(IRHNJ5x034) RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRHNJ54034
部品説明 (IRHNJ5x034) RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRHNJ54034 Datasheet, IRHNJ54034 PDF,ピン配置, 機能
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PD-93752C
IRHNJ57034
RADIATION HARDENED
JANSR2N7480U3
POWER MOSFET
60V, N-CHANNEL
SURFACE MOUNT (SMD-0.5)
Product Summary
REF: MIL-PRF-19500/703
5 TECHNOLOGY
™
Part Number Radiation Level RDS(on) ID QPL Part Number
IRHNJ57034 100K Rads (Si) 0.03022A* JANSR2N7480U3
IRHNJ53034 300K Rads (Si) 0.03022A* JANSF2N7480U3
IRHNJ54034 600K Rads (Si) 0.03022A* JANSG2N7480U3
IRHNJ58034 1000K Rads (Si) 0.03822A* JANSH2N7480U3
SMD-0.5
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low Rdson and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
Features:
n Single Event Effect (SEE) Hardened
n Ultra low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
22*
21
88
75
0.6
±20
100
22
7.5
10
-55 to 150
300 (for 5s)
1.0 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
06/16/04
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IRHNJ54034 pdf, ピン配列
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PRraed-IirartaiodniaCtiohnaracteristics
IRHNJ57034, JANSR2N7480U3
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Up to 600K Rads(Si)1 1000K Rads (Si)2 Units
Test Conditions
Min Max Min Max
BVDSS Drain-to-Source Breakdown Voltage 60
60 —
V VGS = 0V, ID = 1.0mA
VGS(th) Gate Threshold Voltage
2.0 4.0 1.5 4.0
VGS = VDS, ID = 1.0mA
IGSS
Gate-to-Source Leakage Forward — 100 — 100 nA
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
— -100
— -100
VGS = -20 V
IDSS
Zero Gate Voltage Drain Current
— 10 — 25 µA
VDS=48V, VGS =0V
RDS(on) Static Drain-to-Source Ã
— 0.034 — 0.043
VGS = 12V, ID = 21A
On-State Resistance (TO-3)
RDS(on)
VSD
Static Drain-to-Source Ã
On-State Resistance (SMD-.5)
Diode Forward Voltage Ã
— 0.03
— 0.038
— 1.2 — 1.2 V
VGS = 12V, ID = 21A
VGS = 0V, IS = 22A
1. Part numbers IRHNJ57034 ( JANSR2N7480U3 ), IRHNJ53034 ( JANSF2N7480U3 ) and IRHNJ54034 ( JANSG2N7480U3 )
2. Part number IRHNJ58034 ( JANSH2N7480U3 )
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion LET
MeV/(mg/cm2))
Br 37.3
Xe 63
Au 86.6
Energy
(MeV)
285
300
2068
Range
(µm)
36.8
@VG6S0=0V @VG6S0=-5V
29 46
46
106 35
35
VDS (V)
@VG6S0=-10V
35
27
@VG6S0=-15V
25
20
@VGS4=0-20V
15
14
70
60
50
40
30
20
10
0
0
-5 -10 -15 -20
VGS
Br
Xe
Au
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
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IRHNJ54034 電子部品, 半導体
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IRHNJ57034, JANSR2N7480U3
Pre-Irradiation
35
30
25
20
15
10
5
0
25
LIMITED BY PACKAGE
50 75 100 125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
10
1 D = 0.50
0.20
0.10
0.05
0.1 0.02
0.01
0.01
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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部品番号部品説明メーカ
IRHNJ54034

(IRHNJ5x034) RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)

International Rectifier
International Rectifier


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