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IRHNJ8130 の電気的特性と機能

IRHNJ8130のメーカーはInternational Rectifierです、この部品の機能は「(IRHNJx130) N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRHNJ8130
部品説明 (IRHNJx130) N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRHNJ8130 Datasheet, IRHNJ8130 PDF,ピン配置, 機能
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PD - 93820
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
Product Summary
Part Number Radiation Level
IRHNJ7130 100K Rads (Si)
IRHNJ3130 300K Rads (Si)
IRHNJ4130 600K Rads (Si)
IRHNJ8130 1000K Rads (Si)
RDS(on)
0.18
0.18
0.18
0.18
ID
14.4A
14.4A
14.4A
14.4A
International Rectifier’s RAD-HardTM HEXFET® MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low RDS(on) and low gate charge reduces
the power losses in switching applications such as DC
to DC converters and motor control. These devices re-
tain all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of parallel-
ing and temperature stability of electrical parameters.
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current Œ
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current Œ
Repetitive Avalanche Energy Œ
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes refer to the last page
www.irf.com
IRHNJ7130
100V, N-CHANNEL
RAD-HardHEXFET®
MOSFET TECHNOLOGY
SMD-0.5
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Surface Mount
n Light Weight
Pre-Irradiation
Units
14.4
9.1 A
58
75 W
0.6 W/°C
±20 V
150 
mJ
14.4 A
7.5 mJ
6.0 Ž
-55 to 150
V/ns
oC
300 (for 5s)
1.0 (Typical)
g
1
2/4/00
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Radiation Characteristics
IRHNJ7130
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ‘
Parameter
100KRads(Si)1 300K to 1000K Rads (Si)2 Units
Min Max Min Max
BVDSS Drain-to-Source Breakdown Voltage 100 —
100
—V
VGS(th) Gate Threshold Voltage 
2.0 4.0 1.25 4.5
IGSS
IGSS
Gate-to-Source Leakage Forward — 100 — 100 nA
Gate-to-Source Leakage Reverse — -100 — -100
IDSS
Zero Gate Voltage Drain Current
RDS(on) Static Drain-to-Source 
— 25
— 0.19
— 25 µA
— 0.25
On-State Resistance (TO-39)
RDS(on) Static Drain-to-Source 
— 0.18 — 0.24
On-State Resistance (SMD-0.5)
VSD Diode Forward Voltage 
1.5
1.5 V
1. Part numbers IRHNJ7130, IRHNJ3130, IRHNJ4130
2. Part number IRHNJ8130
Test Conditions
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS= 80V, VGS =0V
VGS = 12V, ID = 9.1A
VGS = 12V, ID = 9.1A
VGS = 0V, IS = 14.4A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion LET
MeV/(mg/cm2))
Cu 28.0
Br 36.8
Energy
(MeV)
285
305
Range
(µm) @VGS=0V @VGS=-5V
43.0 100
100
39.0 100
90
VDS (V)
@VGS=-10V
100
70
@VGS=-15V
80
50
@VGS=-20V
60
120
100
80
60
40
20
0
0
-5 -10 -15 -20 -25
VGS
Cu
Br
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
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IRHNJ8130 電子部品, 半導体
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IRHNJ7130
Pre-Irradiation
15
12
9
6
3
0
25 50 75 100 125 150
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
12V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-V D D
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
10
1 D = 0.50
0.20
0.10
0.1 0.05
0.02
0.01
0.01
0.00001
PDM
t1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJC + TC
t2
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6 www.irf.com
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部品番号部品説明メーカ
IRHNJ8130

(IRHNJx130) N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY

International Rectifier
International Rectifier


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