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PDF IRHNJ7130 Data sheet ( Hoja de datos )
| Número de pieza | IRHNJ7130 | |
| Descripción | (IRHNJx130) N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY | |
| Fabricantes | International Rectifier | |
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PD - 93820
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
Product Summary
Part Number Radiation Level
IRHNJ7130 100K Rads (Si)
IRHNJ3130 300K Rads (Si)
IRHNJ4130 600K Rads (Si)
IRHNJ8130 1000K Rads (Si)
RDS(on)
0.18Ω
0.18Ω
0.18Ω
0.18Ω
ID
14.4A
14.4A
14.4A
14.4A
International Rectifier’s RAD-HardTM HEXFET® MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low RDS(on) and low gate charge reduces
the power losses in switching applications such as DC
to DC converters and motor control. These devices re-
tain all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of parallel-
ing and temperature stability of electrical parameters.
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes refer to the last page
www.irf.com
IRHNJ7130
100V, N-CHANNEL
RAD-Hard™ HEXFET®
MOSFET TECHNOLOGY
SMD-0.5
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Surface Mount
n Light Weight
Pre-Irradiation
Units
14.4
9.1 A
58
75 W
0.6 W/°C
±20 V
150
mJ
14.4 A
7.5 mJ
6.0
-55 to 150
V/ns
oC
300 (for 5s)
1.0 (Typical)
g
1
2/4/00
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Pre-Irradiation
IRHNJ7130
2000
1500
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1000
Ciss
500
0
1
Coss
Crss
10
VDS , Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 14 A
16
12
VDS = 80V
VDS = 50V
VDS = 20V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 10 20 30 40 50 60
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
TJ = 150° C
10
TJ = 25 ° C
1
0.1
0.0
VGS = 0 V
0.5 1.0 1.5 2.0
VSD ,Source-to-Drain Voltage (V)
2.5
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
100us
10
1ms
TC = 25 °C
TJ = 150° C
Single Pulse
1
1
10
10ms
100
VDS , Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5
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