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IRHNA7360SE の電気的特性と機能

IRHNA7360SEのメーカーはInternational Rectifierです、この部品の機能は「TRANSISTOR N-CHANNEL」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRHNA7360SE
部品説明 TRANSISTOR N-CHANNEL
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRHNA7360SE Datasheet, IRHNA7360SE PDF,ピン配置, 機能
www.DataShePerte4Uv.icooums Datasheet
Index
Next Data Sheet
Provisional Data Sheet No. PD-9.1398A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET® TRANSISTOR
IRHNA7360SE
N-CHANNEL
SINGLE EVENT EFFECT (SEE) RAD HARD
400 Volt, 0.20, (SEE) RAD HARD HEXFET
International Rectifier’s (SEE) RAD HARD technology
HEXFETs demonstrate virtual immunity to SEE fail-
ure. Additionally, under identical pre- and post-radia-
tion test conditions, International Rectifier’s RAD HARD
HEXFETs retain identical electrical specifications up
to 1 x 105 Rads (Si) total dose. No compensation in
gate drive circuitry is required.These devices are also
capable of surviving transient ionization pulses as high
as 1 x 1012 Rads (Si)/Sec, and return to normal opera-
tion within a few microseconds. Since the SEE pro-
cess utilizes International Rectifier’s patented HEXFET
technology, the user can expect the highest quality and
reliability in the industry.
RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFETs, such as
voltage control, very fast switching, ease of parallel-
ing and temperature stability of the electrical param-
eters.
They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high-energy pulse circuits
in space and weapons environments.
Product Summary
Part Number
BV DSS
IRHNA7360SE 400V
RDS(on)
0.20
ID
24.3A
Features:
n Radiation Hardened up to 1 x 105 Rads (Si)
n Single Event Burnout (SEB) Hardened
n Single Event Gate Rupture (SEGR) Hardened
n Gamma Dot (Flash X-Ray) Hardened
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Rating
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Lightweight
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current 
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery dv/dt ƒ
TJ
TSTG
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
DataSheet4 U .com
To Order
Pre-Radiation
IRHNA7360SE
24.3
15.3
97.2
300
2.4
±20
500
24.3
30
4.0
-55 to 150
300 (for 5 sec.)
3.3 (typical)
Units
A
W
W/K …
V
mJ
A
mJ
V/ns
oC
g

1 Page





IRHNA7360SE pdf, ピン配列
www.DataShePerte4Uv.icooums Datasheet
IRHNA7360SE Device
Index
Next Data Sheet
Radiation Characteristics
Radiation Performance of Rad Hard HEXFETs
International Rectifier Radiation Hardened HEX-
FETs are tested to verify their hardness capability.
The hardness assurance program at International
Rectifier uses two radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019. International Rectifier has imposed a
standard gate voltage of 12 volts per note 6 and a
VDSS bias condition equal to 80% of the device
rated voltage per note 7. Pre- and post-radiation
limits of the devices irradiated to 1 x 105 Rads (Si)
are identical and are presented in Table 1, column
1, IRHNA7360SE. The values in Table 1 will be met
for either of the two low dose rate test circuits that
are used. Both pre- and post-radiation performance
are tested and specified using the same drive cir-
cuitry and test conditions in order to provide a direct
comparison. It should be noted that at a radiation
level of 1 x 105 Rads (Si), no change in limits are
specified in DC parameters.
High dose rate testing may be done on a special
request basis, using a dose rate up to 1 x 1012 Rads
(Si)/Sec.
International Rectifier radiation hardened HEXFETs
have been characterized in neutron and heavy ion
Single Event Effects (SEE) environments. Single
Event Effects characterization is shown in Table 3.
Table 1. Low Dose Rate † ‡
Parameter
BVDSS Drain-to-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage „
IGSS
Gate-to-Source Leakage Forward
IGSS
Gate-to-Source Leakage Reverse
IDSS
Zero Gate Voltage Drain Current
RDS(on)1 Static Drain-to-Source „
On-State Resistance One
VSD
Diode Forward Voltage „
IRHNA7360SE
100K Rads (Si)
min. max.
400 —
2.0 4.5
— 100
— -100
— 50
— 0.20
Units Test Conditions Š
V VGS = 0V, ID = 1.0 mA
VGS = VDS, ID = 1.0 mA
nA VGS = 20V
VGS = -20V
µA VDS = 0.8 x Max Rating, VGS = 0V
VGS = 12V, ID =15.3A
— 1.35 V TC = 25°C, IS = 24.3A,VGS = 0V
Table 2. High Dose Rate ˆ
Parameter
VDSS Drain-to-Source Voltage
IPP
di/dt
L1
1011 Rads (Si)/sec 1012 Rads (Si)/sec
Min. Typ Max. Min. Typ. Max. Units
Test Conditions
— — 320 — — 320 V Applied drain-to-source voltage
during gamma-dot
— 6.4 — — 6.4 — A Peak radiation induced photo-current
— — 16 — — 2.3 A/µsec Rate of rise of photo-current
20 — — 137 — — µH Circuit inductance required to limit di/dt
Table 3. Single Event Effects ‰
Parameter Typ.
Units
BVDSS
400
V
LET (Si)
Fluence Range
Ion (MeV/mg/cm2) (ions/cm2) (µm)
Ni 28
1 x 105
~35
VDS Bias
(V)
320
VGS Bias
(V)
-5
DataSheet4 U .com
To Order


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部品番号部品説明メーカ
IRHNA7360SE

TRANSISTOR N-CHANNEL

International Rectifier
International Rectifier


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