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IRHNA597260のメーカーはInternational Rectifierです、この部品の機能は「(IRHNA593260 / IRHNA597260) RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)」です。 |
部品番号 | IRHNA597260 |
| |
部品説明 | (IRHNA593260 / IRHNA597260) RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) | ||
メーカ | International Rectifier | ||
ロゴ | |||
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PD - 94168A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
Product Summary
Part Number Radiation Level
IRHNA597260 100K Rads (Si)
IRHNA593260 300K Rads (Si)
RDS(on) ID
0.102Ω -35.5A
0.102Ω -35.5A
IRHNA597260
200V, P-CHANNEL
4# TECHNOLOGY
c
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
SMD-2
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
Pre-Irradiation
Units
-35.5
-22.5
A
-142
300 W
2.4 W/°C
±20 V
320 mJ
-35.5
A
30 mJ
10
-55 to 150
V/ns
oC
300 ( for 5s )
3.3 ( Typical )
g
For footnotes refer to the last page
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PRraed-IirartaiodniaCtiohnaracteristics
IRHNA597260
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
100K Rads(Si)1 300KRads(Si)2
Min Max Min Max
Units
Test Conditions
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source ➃
On-State Resistance (TO-3)
Static Drain-to-Source ➃
On-State Resistance (SMD-2)
Diode Forward Voltage ➃
-200
-2.0
—
—
—
—
—
-4.0
-100
100
-10
0.103
-200
-2.0
—
—
—
—
— 0.102 —
— -5.0 —
—V
VGS = 0V, ID = -1.0mA
-5.0 VGS = VDS, ID = -1.0mA
-100 nA
VGS =-20V
100 VGS = 20 V
-10 µA
VDS = -160V, VGS =0V
0.103 Ω
VGS = -12V, ID =-22.5A
0.102 Ω
VGS = -12V, ID =-22.5A
-5.0 V
VGS = 0V, IS = -35.5A
1. Part number IRHNA597260,
2. Part number IRHNA593260
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion LET
Energy
(MeV/(mg/cm2)) (MeV)
Br 37.3
285
I 59.9
345
Au 82.3
357
Range
(µm)
36.8
32.7
28.5
@VGS=0V @VGS=5V
- 200
- 200
- 200
- 200
- 200
- 200
VDS (V)
@VGS=10V @VGS=15V
- 200
- 200
- 200
- 50
- 200
- 35
@VGS=20V
-75
—
—
-250
-200
-150
-100
-50
0
0
5 10 15
VGS
20
Br
I
Au
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHNA597260
Pre-Irradiation
40
30
20
10
0
25 50 75 100 125 150
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
-
+ VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.1 0.20
0.10
0.05
0.02
0.01
0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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ページ | 合計 : 8 ページ | ||
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部品番号 | 部品説明 | メーカ |
IRHNA597260 | (IRHNA593260 / IRHNA597260) RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) | International Rectifier |