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IRHNA58260のメーカーはInternational Rectifierです、この部品の機能は「(IRHNA5x260) N-CHANNEL」です。 |
部品番号 | IRHNA58260 |
| |
部品説明 | (IRHNA5x260) N-CHANNEL | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRHNA58260ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
www.DataSheet4U.com
PD - 91838C
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
Product Summary
Part Number Radiation Level
IRHNA57260 100K Rads (Si)
IRHNA53260 300K Rads (Si)
IRHNA54260 600K Rads (Si)
IRHNA58260 1000K Rads (Si)
RDS(on)
0.038Ω
0.038Ω
0.038Ω
0.043Ω
ID
55A
55A
55A
55A
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes refer to the last page
www.irf.com
IRHNA57260
200V, N-CHANNEL
R5 TECHNOLOGY
SMD-2
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
55
35
220
300
2.4
±20
380
55
30
9.2
-55 to 150
300 (for 5s)
3.3 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
g
1
11/19/99
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1 Page www.DataSheet4U.com
Radiation Characteristics
IRHNA57260
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
Up to 600K Rads(Si)1 1000K Rads (Si)2 Units
Min Max Min Max
Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 200
— 200 — V
VGS = 0V, ID = 1.0mA
VGS(th) Gate Threshold Voltage
2.0 4.0 1.5 4.0
VGS = VDS, ID = 1.0mA
IGSS
IGSS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
— 100
— -100
— 100 nA
— -100
VGS = 20V
VGS = -20 V
IDSS
Zero Gate Voltage Drain Current
RDS(on) Static Drain-to-Source
— 10 — 10 µA
— 0.039 — 0.044 Ω
VDS=160V, VGS =0V
VGS = 12V, ID =35A
On-State Resistance (TO-3)
RDS(on) Static Drain-to-Source
— 0.038 —
0.043 Ω
VGS = 12V, ID =35A
On-State Resistance (SMD-2)
VSD Diode Forward Voltage
— 1.2 — 1.2 V
VGS = 0V, IS = 55A
1. Part numbers IRHNA57260, IRHNA53260 and IRHNA54260
2. Part number IRHNA58260
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion LET
MeV/(mg/cm2))
Br 36.7
I 59.8
Au 82.3
Energy
(MeV)
309
341
350
Range
(µm) @VGS=0V @VGS=-5V
39.5 200
200
32.5 200
100
28.4 50
35
VDS (V)
@VGS=-10V
150
40
25
@VGS=-15V
100
35
—
@VGS=-20V
50
30
—
250
200
150
100
50
0
0
-5 -10 -15 -20
VGS
Br
I
Au
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
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IRHNA57260
Pre-Irradiation
60
50
40
30
20
10
0
25 50 75 100 125 150
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
1
VDS
VGS
RG
RD
D.U.T.
12V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
D = 0.50
0.1
0.01
0.20
0.10
0.05
0.02
0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
0.0001
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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ページ | 合計 : 8 ページ | ||
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部品番号 | 部品説明 | メーカ |
IRHNA58260 | (IRHNA5x260) N-CHANNEL | International Rectifier |