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IRHNA57064 の電気的特性と機能

IRHNA57064のメーカーはInternational Rectifierです、この部品の機能は「(IRHNA5x064) RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRHNA57064
部品説明 (IRHNA5x064) RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRHNA57064 Datasheet, IRHNA57064 PDF,ピン配置, 機能
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PD - 91852G
IRHNA57064
RADIATION HARDENED
JANSR2N7468U2
POWER MOSFET
SURFACE MOUNT (SMD-2)
Product Summary
60V, N-CHANNEL
REF: MIL-PRF-19500/673
5 TECHNOLOGY
™
Part Number Radiation Level RDS(on) ID QPL Part Number
IRHNA57064 100K Rads (Si) 0.005675*A JANSR2N7468U2
IRHNA53064 300K Rads (Si) 0.005675*A JANSF2N7468U2
IRHNA54064 600K Rads (Si) 0.005675*A JANSG2N7468U2
IRHNA58064 1000K Rads (Si) 0.006575*A JANSH2N7468U2
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
SMD-2
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
75*
75*
300
250
2.0
±20
500
75
25
4.4
-55 to 150
300 (for 5s)
3.3 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
06/09/04
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Radiation Characteristics
IRHNA57064, JANSR2N7468U2
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Up to 600K Rads(Si)1 1000K Rads (Si)2 Units
Test Conditions
Min Max Min Max
BVDSS Drain-to-Source Breakdown Voltage 60
60 — V VGS = 0V, ID = 1.0mA
VGS(th) Gate Threshold Voltage
2.0 4.0 1.5 4.0
VGS = VDS, ID = 1.0mA
IGSS
IGSS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
— 100
— -100
— 100 nA
— -100
VGS = 20V
VGS = -20 V
IDSS
Zero Gate Voltage Drain Current
— 10 — 25 µA
VDS=48V, VGS =0V
RDS(on) Static Drain-to-Source Ã
— 0.0061 — 0.0071
VGS = 12V, ID =45A
On-State Resistance (TO-3)
RDS(on) Static Drain-to-Source Ã
— 0.0056 — 0.0065
VGS = 12V, ID =45A
On-State Resistance (SMD-2)
VSD Diode Forward Voltage Ã
— 1.3 — 1.3 V
VGS = 0V, IS = 45A
1. Part numbers IRHNA57064 ( JANSR2N7468U2 ), IRHNA53064 ( JANSF2N7468U2 ) and IRHNA54064 ( JANSG2N7468U2 )
2. Part number IRHNA58064 ( JANSH2N7468U2 )
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion LET Energy Range
VDS (V)
(MeV/(mg/cm2)) (MeV)
(µm) @VGS =0V @VGS= -5V @VGS= -10V @VGS=-15V @VGS=-20V
Br 37.3
285 36.8 60
60
60
60
40
Xe 63
300 29 46
46
35
25
15
Au 86.6
2068
106
35
35
27
20
14
70
60
50
40
30
20
10
0
0
-5 -10 -15 -20
VGS
Br
Xe
Au
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
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IRHNA57064 電子部品, 半導体
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IRHNA57064, JANSR2N7468U2
Pre-Irradiation
160
LIMITED BY PACKAGE
120
80
40
0
25 50 75 100 125 150
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.1 0.20
0.10
0.05
0.02
0.01
0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
0.0001
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.001
0.01
t1, Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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部品番号部品説明メーカ
IRHNA57064

(IRHNA5x064) RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)

International Rectifier
International Rectifier


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