PDF IRHN7250 Data sheet ( Hoja de datos )

Número de pieza	IRHN7250
Descripción	(IRHN7250 / IRHN8250) TRANSISTOR N-CHANNEL
Fabricantes	International Rectifier
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No Preview Available ! www.DataShePetr4eUv.ciooums Datasheet Index Next Data Sheet Provisional Data Sheet PD 9.679C REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR IRHN7250 IRHN8250 N-CHANNEL MEGA RAD HARD 200 Volt, 0.10Ω, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD technology HEXFET power MOSFETs demonstrate excellent threshold voltage stability and breakdown voltage sta- bility at total radiation doses as high as 1 x 106 Rads (Si). Under identical pre- and post-radiation test con- ditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. At 1 x 106 Rads (Si) total dose, under the same pre-dose conditions, only minor shifts in the electrical specifications are observed and are so specified in table 1. No compensation in gate drive cir- cuitry is required. In addition, these devices are capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect (SEE) testing of International Rectifier RAD HARD HEXFETs has dem- onstrated virtual immunity to SEE failure. Since the MEGA RAD HARD process utilizes International Rectifier’s patented HEXFET technology, the user can expect the highest quality and reliability in the industry. RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as volt- age control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, au- dio amplifiers and high-energy pulse circuits in space and weapons environments. Product Summary Part Number BVDSS IRHN7250 200V IRHN8250 200V RDS(on) 0.10Ω 0.10Ω ID 26A 26A Features: s Radiation Hardened up to 1 x 106 Rads (Si) s Single Event Burnout (SEB) Hardened s Single Event Gate Rupture (SEGR) Hardened s Gamma Dot (Flash X-Ray) Hardened s Neutron Tolerant s Identical Pre- and Post-Electrical Test Conditions s Repetitive Avalanche Rating s Dynamic dv/dt Rating s Simple Drive Requirements s Ease of Paralleling s Hermetically Sealed s Surface Mount s Light-weight Absolute Maximum Ratings ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt TJ TSTG Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight Pre-Radiation IRHN7250, IRHN8250 Units 26 16 A 104 150 W 1.2 W/K ±20 V 500 mJ 26 A 15 mJ 5.0 V/ns -55 to 150 oC 300 (for 5 sec.) 2.6 (typical) g DataSheet4 U .com To Order F-347 1 page www.DataShePetr4eUv.ciooums Datasheet Index Next Data Sheet IRHN7250/IRHN8250 Devices Post-Radiation Figure 5. – Typical Zero Gate Voltage Drain Current Vs. Total Dose Exposure Figure 6. – Typical On-State Resistance Vs. Neutron Fluence Level Figure 8a. – During Radiation Gate Stress of VGSS = 12V Figure 7. – Typical Transient Response of Rad Hard HEXFET During 1 x1012 Rad (Si)/Sec Exposure Figure 8b. – During Radiation VDSS Stress = 80% of BVDSS DataSheet4 U .com To Order Figure 9. – High Dose Rate (Gamma Dot) Test Circuit F-351 5 Page www.DataShePetr4eUv.ciooums Datasheet Index Next Data Sheet IRHN7250/IRHN8250 Devices Pre-Radiation VDS VGS RG RD D.U.T. 10V Pulse Width ≤ 1 Duty Factor ≤ 0.1 +-VDD Figure 28a. – Switching Time Test Circuit VDS 90% 10% VGS td(on) tr td(off) tf Figure 28b. – Switching Time Waveforms 15 V VD S L RG 20V tp D .U.T IAS 0 .0 1Ω D R IV ER + - VDD A Figure 29a. – Unclamped Inductive Test Curcuit V(BR )DSS tp IAS Figure 29b. – Unclamped Inductive Waveforms DataSheet4 U .com To Order F-357 11 Page

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