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IRHN8130 の電気的特性と機能

IRHN8130のメーカーはInternational Rectifierです、この部品の機能は「(IRHN7130 / IRHN8130) TRANSISTOR N-CHANNEL」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRHN8130
部品説明 (IRHN7130 / IRHN8130) TRANSISTOR N-CHANNEL
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRHN8130 Datasheet, IRHN8130 PDF,ピン配置, 機能
www.DataShePert4eUv.icooums Datasheet
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Provisional Data Sheet No. PD-9.821A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET® TRANSISTOR
IRHN7130
IRHN8130
N-CHANNEL
MEGA RAD HARD
100 Volt, 0.18, MEGA RAD HARD HEXFET
International Rectifier’s MEGA RAD HARD technology
HEXFETs demonstrate excellent threshold voltage sta-
bility and breakdown voltage stability at total radiation
doses as high as 1 x 106 Rads (Si). Under identical pre-
and post-radiation test conditions, International Rectifier’s
RAD HARD HEXFETs retain identical electrical specifi-
cations up to 1 x 105 Rads (Si) total dose. At 1 x 106 Rads
(Si) total dose, under the same pre-dose conditions, only
minor shifts in the electrical specifications are observed
and are so specified in table 1. No compensation in gate
drive circuitry is required. In addition, these devices are
capable of surviving transient ionization pulses as high
as 1 x 1012 Rads (Si)/Sec, and return to normal operation
within a few microseconds. Single Event Effect (SEE)
testing of International Rectifier RAD HARD HEXFETs
has demonstrated virtual immunity to SEE failure. Since
the MEGA RAD HARD process utilizes International
Rectifier’s patented HEXFET technology, the user can
expect the highest quality and reliability in the industry.
RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFETs, such as volt-
age control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
Product Summary
Part Number
BV DSS
IRHN7130
100V
IRHN8130
100V
RDS(on)
0.18
0.18
ID
14
14
Features:
s Radiation Hardened up to 1 x 106 Rads (Si)
s Single Event Burnout (SEB) Hardened
s Single Event Gate Rupture (SEGR) Hardened
s Gamma Dot (Flash X-Ray) Hardened
s Neutron Tolerant
s Identical Pre- and Post-Electrical Test Conditions
s Repetitive Avalanche Rating
s Dynamic dv/dt Rating
s Simple Drive Requirements
s Ease of Paralleling
s Hermetically Sealed
s Surface Mount
s Light-weight
They are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers, au-
dio amplifiers and high-energy pulse circuits in space and
weapons environments.
Absolute Maximum Ratings
Pre-Radiation
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
Pulsed Drain Current Œ
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
Gate-to-Source Voltage
Single Pulse Avalanche Energy 
Avalanche Current Œ
Repetitive Avalanche Energy Œ
dv/dt
Peak Diode Recovery dv/dt Ž
TJ
TSTG
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
DataSheet4 U .com
Weight
To Order
IRHN7130, IRHN8130
14
9.0
56
75
0.60
±20
160 (see fig. 29)
14
7.5
5.5 (see fig. 30)
-55 to 150
300 (for 5 sec.)
2.6 (typical)
Units
A
W
W/K 
V
mJ
A
mJ
V/ns
oC
g

1 Page





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IRHN7130, IRHN8130 Devices
Radiation Characteristics
Radiation Performance of Mega Rad Hard HEXFETs
International Rectifier Radiation Hardened HEX-FETs
are tested to verify their hardness capability.
The hardness assurance program at International
Rectifier uses two radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019. International Rectifier has imposed a
standard gate voltage of 12 volts per note 6 and
figure 8a and a VDSS bias condition equal to 80%
of the device rated voltage per note 7 and figure
8b. Pre- and post-radiation limits of the devices irra-
diated to 1 x 105 Rads (Si) are identical and are pre-
sented in Table 1, column 1, IRHN7130. Device
performance limits at a post radiation level of 1 x
106 Rads (Si) are presented in Table 1, column 2,
IRHN8130. The values in Table 1 will be met for ei-
ther of the two low dose rate test circuits that are
used. Typical delta curves showing radiation re-
sponse appear in figures 1 through 5. Typical post-
radiation curves appear in figures 10 through 17.
Both pre- and post-radiation performance are tested
and specified using the same drive circuitry and test
conditions in order to provide a direct comparison. It
should be noted that at a radiation level of 1 x 105
Rads (Si), no change in limits are specified in DC
parameters. At a radiation level of 1 x106 Rads (Si),
leakage remains low and the device is usable with
no change in drive circuitry required.
High dose rate testing may be done on a special
request basis, using a dose rate up to 1 x 1012 Rads
(Si)/Sec. Photocurrent and transient voltage wave-
forms are shown in figure 7, and the recommended
test circuit to be used is shown in figure 9.
International Rectifier radiation hardened HEXFETs
have been characterized in neutron and heavy ion
Single Event Effects (SEE) environments. The ef-
fects on bulk silicon of the type used by Interna-
tional Rectifier on RAD HARD HEXFETs are shown
in figure 6. Single Event Effects characterization is
shown in Table 3.
Table 1. Low Dose Rate ‘ ’
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)1
VSD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage 
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source 
On-State Resistance One
Diode Forward Voltage 
IRHN7130 IRHN8130
100K Rads (Si) 1000K Rads (Si) Units
min. max. min. max.
Test Conditions •
100 —
2.0 4.0
— 100
— -100
— 25
— 0.18
100
1.25
4.5
100
-100
25
0.24
V VGS = 0V, ID = 1.0 mA
VGS = VDS, ID = 1.0 mA
nA VGS = +20V
VGS = -20V
µA VDS = 0.8 x Max Rating, VGS = 0
VGS = 12V, ID = 9A
— 1.8 — 1.8 V TC = 25°C, IS = 14A,VGS = 0V
Table 2. High Dose Rate “
Parameter
VDSS Drain-to-Source Voltage
IPP
di/dt
L1
1011 Rads (Si)/sec 1012 Rads (Si)/sec
Min. Typ Max. Min. Typ. Max. Units
Test Conditions
— — 80 — — 80 V Applied drain-to-source voltage
during gamma-dot
— 100 — — 100 — A Peak radiation induced photo-current
— — 1000 — — 200 A/µsec Rate of rise of photo-current
0.1 — — 0.5 — — µH Circuit inductance required to limit di/dt
Table 3. Single Event Effects ”
Parameter
BVDSS
Typ.
100
Units
V
DataSheet4 U .com
LET (Si)
Fluence Range
Ion (MeV/mg/cm2) (ions/cm2) (µm)
Ni 28
1 x 105
~41
VDS Bias
(V)
100
VGS Bias
(V)
-5
To Order


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IRHN8130 電子部品, 半導体
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IRHN7130, IRHN8130 Devices
Radiation Characteristics
Note: Bias Conditions during radiation; VGS = 12 Vdc, VDS = 0 Vdc
Figure 10. – Typical Output Characteristics Pre-Radiation. Figure 11. – Typical Output Characteristics, Post Radiation
100K Rads (Si).
Figure 12. – Typical Output Characteristics Post-Radiation
300K Rads (Si).
Figure 13. – Typical Output Characteristics
Post-Radiation 1 Mega Rads (Si)
DataSheet4 U .com
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部品番号部品説明メーカ
IRHN8130

(IRHN7130 / IRHN8130) TRANSISTOR N-CHANNEL

International Rectifier
International Rectifier


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