IRHN2C50SE Datasheet PDF - International Rectifier
| Part Number | IRHN2C50SE | |
| Description | (IRHN2C50SE / IRHN7C50SE) TRANSISTOR N-CHANNEL | |
| Manufacturers | International Rectifier | |
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There is a preview and IRHN2C50SE download ( pdf file ) link at the bottom of this page. Total 4 Pages | ||
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Provisional Data Sheet No. PD-9.1476A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET® TRANSISTOR
IRHN2C50SE
IRHN7C50SE
N-CHANNEL
SINGLE EVENT EFFECT (SEE) RAD HARD
600 Volt, 0.60Ω, (SEE) RAD HARD HEXFET
International Rectifier’s (SEE) RAD HARD technology
HEXFETs demonstrate virtual immunity to SEE fail-
ure. Additionally, under identical pre- and post-radia-
tion test conditions, International Rectifier’s RAD HARD
HEXFETs retain identical electrical specifications up
to 1 x 105 Rads (Si) total dose. No compensation in
gate drive circuitry is required.These devices are also
capable of surviving transient ionization pulses as high
as 1 x 1012 Rads (Si)/Sec, and return to normal opera-
tion within a few microseconds. Since the SEE pro-
cess utilizes International Rectifier’s patented HEXFET
technology, the user can expect the highest quality
and reliability in the industry.
RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFETs, such as volt-
age control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high-energy pulse circuits
in space and weapons environments.
Product Summary
Part Number
BV DSS
IRHN2C50SE
IRHN7C50SE
600V
RDS(on)
ID
0.60Ω 10.4A
Features:
s Radiation Hardened up to 1 x 105 Rads (Si)
s Single Event Burnout (SEB) Hardened
s Single Event Gate Rupture (SEGR) Hardened
s Gamma Dot (Flash X-Ray) Hardened
s Neutron Tolerant
s Identical Pre- and Post-Electrical Test Conditions
s Repetitive Avalanche Rating
s Dynamic dv/dt Rating
s Simple Drive Requirements
s Ease of Paralleling
s Hermetically Sealed
s Surface Mount
s Light-Weight
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
To Order
DataSheet4 U .com
Pre-Radiation
IRHN2C50SE, IRHN7C50SE
10.4
6.5
41.6
150
1.2
±20
500
10.4
15
3.0
-55 to 150
Units
A
W
W/K
V
mJ
A
mJ
V/ns
300 (for 5 seconds)
2.6 (typical)
oC
g
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IRHN2C50SE electronic component. |
| Information | Total 4 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ IRHN2C50SE.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| IRHN2C50SE | The function is (IRHN2C50SE / IRHN7C50SE) TRANSISTOR N-CHANNEL. International Rectifier | |
| IRHN2C50SE | The function is (IRHN2C50SE / IRHN7C50SE) TRANSISTOR N-CHANNEL. International Rectifier | |
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