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H7N0308AB の電気的特性と機能

H7N0308ABのメーカーはRenesas Technologyです、この部品の機能は「Silicon N Channel MOS FET High Speed Power Switching」です。


製品の詳細 ( Datasheet PDF )

部品番号 H7N0308AB
部品説明 Silicon N Channel MOS FET High Speed Power Switching
メーカ Renesas Technology
ロゴ Renesas Technology ロゴ 




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H7N0308AB Datasheet, H7N0308AB PDF,ピン配置, 機能
H7N0308AB
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS (on) = 3.8 mtyp.
Low drive current
4.5 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
123
G
D
S
REJ03G1122-0400
(Previous: ADE-208-1569B)
Rev.4.00
Sep 07, 2005
1. Gate
2. Drain (Flange)
3. Source
Rev.4.00 Sep 07, 2005 page 1 of 6

1 Page





H7N0308AB pdf, ピン配列
H7N0308AB
Main Characteristics
Power vs. Temperature Derating
160
120
80
40
0
0 50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
100
10 V
Pulse Test
80 4.5 V
3.5 V
60
3V
40
20
VGS = 2.5 V
0
0 2 4 6 8 10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
500
Pulse Test
400
300
200 ID = 50 A
100 20 A
0 10 A
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
Rev.4.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
500
100
10
1
DC Operation
Operation in
1 ms 100
PW
= 10 ms
µs
10
µs
this area is
limited by RDS (on)
0.1
Tc = 25°C
1 shot Pulse
0.01
0.1 0.3 1 3 10 30 100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
100
VDS = 10 V
Pulse Test
80
60
40 25°C
Tc = 75°C
–25°C
20
0
012345
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
30
10 VGS = 4.5 V
3
10 V
1
0.3
0.1
1
3 10 30 100 300 1000
Drain Current ID (A)


3Pages


H7N0308AB 電子部品, 半導体
H7N0308AB
Package Dimensions
JEITA Package Code
SC-46
RENESAS Code
PRSS0004AC-A
Package Name
TO-220AB / TO-220ABV
MASS[Typ.]
1.8g
11.5 Max
10.16 ± 0.2
9.5
8.0
φ
3.6
+0.1
–0.08
4.44 ± 0.2
1.26 ± 0.15
2.54 ± 0.5
1.5 Max
0.76 ± 0.1
2.54 ± 0.5
2.7 Max
0.5 ± 0.1
Unit: mm
Ordering Information
Part Name
Quantity
Shipping Container
H7N0308AB-E
500 pcs
Box (Sack)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.4.00 Sep 07, 2005 page 6 of 6

6 Page



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部品番号部品説明メーカ
H7N0308AB

Silicon N Channel MOS FET High Speed Power Switching

Renesas Technology
Renesas Technology


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