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IXFN27N80 の電気的特性と機能

IXFN27N80のメーカーはIXYS Corporationです、この部品の機能は「(IXFx2xN80) HiPerFETTM Power MOSFETs」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXFN27N80
部品説明 (IXFx2xN80) HiPerFETTM Power MOSFETs
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




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IXFN27N80 Datasheet, IXFN27N80 PDF,ピン配置, 機能
www.DataSheet4U.com
Not for New Designs
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
IXFK 27N80
IXFK 25N80
IXFN 27N80
IXFN 25N80
Symbol
Test Conditions
Maximum Ratings
IXFK
IXFN
V
DSS
V
DGR
VGS
V
GSM
ID25
IDM
IAR
EAR
dv/dt
PD
TJ
TJM
Tstg
T
L
VISOL
Md
T
J
= 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
M
Continuous
Transient
800 800
800 800
±20 ±20
±30 ±30
V
V
V
V
TC = 25°C, Chip capability
27N80
25N80
TC = 25°C, pulse width limited by TJM 27N80
TC = 25°C
25N80
27N80
25N80
27
25
108
100
14
13
27
25
108
100
14
13
A
A
A
A
A
A
TC= 25°C
ISIDM, di/dt 100 A/µs, VDD VDSS,
T
J
150°C,
R
G
=
2
TC = 25°C
30 30 mJ
5 5 V/ns
500 520
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
1.6 mm (0.063 in) from case for 10 s
300
- °C
50/60 Hz, RMS
IISOL 1 mA
t = 1 min
t=1s
Mounting torque
Terminal connection torque
-
-
0.9/6
-
2500
3000
V~
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
10 30 g
Symbol
VDSS
VGH(th)
I
GSS
IDSS
RDS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ.
max.
VGS = 0 V, ID = 3 mA
VDSS temperature coefficient
VDS = VGS, ID = 8 mA
VGS(th) temperature coefficient
800
2
V
GS
=
±20
V,
DC
V
DS
=
0
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t 300 µs,
duty cycle d 2 %
25N80
27N80
0.096
-0.214
V
%/K
4.5 V
%/K
±200 nA
500 µA
2 mA
0.35
0.30
VDSS
800 V
800 V
800 V
800 V
ID25
27 A
25 A
27 A
25 A
TO-264 AA (IXFK)
RDS(on)
0.30
0.35
0.30
0.35
G
D
S
miniBLOC, SOT-227 B (IXFN)
E153432
S
DG
(TAB)
G
S
S
S
D
G = Gate
D = Drain
S = Source
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
International standard packages
JEDEC TO-264 AA, epoxy meet
UL 94 V-0, flammability classification
miniBLOC, with Aluminium nitride
isolation
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Advantages
Easy to mount
Space savings
High power density
© 2002 IXYS All rights reserved
DataSheet4 U .com
95561D(6/02)

1 Page





IXFN27N80 pdf, ピン配列
www.DataSheet4U.com
40
TJ = 25OC
30
20
VGS = 9V
8V
7V
6V
5V
10
4V
0
0 2 4 6 8 10
VDS - Volts
Figure 1. Output Characteristics at 25OC
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
VGS = 10V
TJ = 125OC
TJ = 25OC
10 20 30
40
50
ID - Amperes
Figure 3. RDS(on) normalized to 0.5 ID25 value
vs. ID
30
25
IXF_25N80
IXFN27N80
20
IXFK27N80
15
10
5
0
-50 -25 0 25 50 75 100 125 150
TC - Degrees C
Figure 5. Drain Current vs. Case Temperature
© 2002 IXYS All rights reserved
DataSheet4 U .com
IXFK 25N80 IXFK 27N80
IXFN 25N80 IXFN 27N80
40
TJ = 125OC
30
20
VGS = 9V
8V
7V
6V
5V
10
4V
0
0 4 8 12 16 20
VDS - Volts
Figure 2. Output Characteristics at 125OC
2.6
2.4 VGS = 10V
2.2
2.0
1.8 ID = 27A
1.6
1.4 ID = 13.5A
1.2
1.0
25 50 75 100 125 150
TJ - Degrees C
Figure 4. RDS(on) normalized to 0.5 ID25 value vs. TJ
30
25
20
15
10 TJ = 125oC
5
TJ = 25oC
0
2345
VGS - Volts
Figure 6. Admittance Curves
6
7


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共有リンク

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部品番号部品説明メーカ
IXFN27N80

(IXFx2xN80) HiPerFETTM Power MOSFETs

IXYS Corporation
IXYS Corporation
IXFN27N80Q

HiPerFET Power MOSFETs Q-Class

IXYS Corporation
IXYS Corporation


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