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PDF IXFT80N10 Data sheet ( Hoja de datos )
| Número de pieza | IXFT80N10 | |
| Descripción | (IXFH80N10 / IXFT80N10) HiPerFET Power MOSFETs | |
| Fabricantes | IXYS Corporation | |
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HiPerFETTM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt
Preliminary data sheet
IXFH 80N10
IXFT 80N10
VDSS = 100 V
ID25 = 80 A
RDS(on) = 12.5 mΩ
trr ≤ 200 ns
Symbol
VDSS
VDGR
VGS
VGSM
I
D25
I
L(RMS)
I
DM
IAR
EAR
EAS
dv/dt
P
D
T
J
TJM
Tstg
TL
Md
Weight
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
T
C
= 25°C
Lead current limit
T
C
=
25°C,
pulse
width
limited
by
T
JM
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
T
J
≤
150°C,
R
G
=
2
Ω
T
C
= 25°C
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247
TO-268
Maximum Ratings
100
100
±20
±30
80
75
320
80
50
2.5
5
V
V
V
V
A
A
A
A
mJ
J
V/ns
300
-55 to +150
150
-55 to +150
W
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
6g
4g
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 1 mA
VDS = VGS, ID = 4 mA
100
2.0
VGS = ±20 VDC, VDS = 0
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
V
4.0 V
±100 nA
50 µA
1 mA
12.5 m Ω
TO-247 AD (IXFH)
(TAB)
TO-268 ( IXFT) Case Style
G
S
G = Gate D = Drain
S = Source TAB = Drain
(TAB)
Features
l International standard packages
l Low RDS (on)
l Rated for unclamped Inductive load
switching (UIS)
l Molding epoxies meet UL 94 V-0
flammability classification
Advantages
l Easy to mount
l Space savings
l High power density
© 2000 IXYS All rights reserved
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