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PDF IXFT80N15Q Data sheet ( Hoja de datos )
| Número de pieza | IXFT80N15Q | |
| Descripción | (IXFx80N15Q) HiPerFET Power MOSFETs Q-Class | |
| Fabricantes | IXYS Corporation | |
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HiPerFETTM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q
g
IXFH 80N15Q
IXFK 80N15Q
IXFT 80N15Q
V
DSS
ID25
RDS(on)
trr
= 150 V
= 80 A
= 22.5 mW
£ 200 ns
Preliminary data sheet
Symbol
VDSS
VDGR
VGS
V
GSM
ID25
I
DM
IAR
E
AR
EAS
dv/dt
PD
T
J
TJM
T
stg
TL
Md
Weight
Symbol
V
DSS
V
GS(th)
IGSS
IDSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
TC = 25°C
T
C
=
25°C,
pulse
width
limited
by
T
JM
TC = 25°C
T
C
= 25°C
TC = 25°C
I
S
£
I,
DM
di/dt
£
100
A/ms,
V
DD
£
V,
DSS
TJ £ 150°C, RG = 2 W
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247
TO-264
TO-247
TO-264
TO-268
Maximum Ratings
150 V
150 V
±20 V
±30 V
80 A
320 A
80 A
45 mJ
1.5 J
5 V/ns
360
-55 ... +150
150
-55 ... +150
300
W
°C
°C
°C
°C
1.13/10 Nm/lb.in.
0.9/6 Nm/lb.in.
6g
10 g
4g
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V = 0 V, I = 250 uA
GS D
V = V , I = 4 mA
DS GS D
VGS = ±20 VDC, VDS = 0
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
150
2.0
V
4.0 V
±100 nA
25 mA
1 mA
22.5 m W
TO-247 AD (IXFH)
TO-268 (D3) ( IXFT)
G
S
TO-264 AA (IXFK)
(TAB)
(TAB)
G
D
S
D (TAB)
G = Gate
S = Source
TAB = Drain
Features
l Low gate charge
l International standard packages
l Epoxy meet UL 94 V-0, flammability
classification
l Low RDS (on) HDMOSTM process
l Rugged polysilicon gate cell structure
l Avalanche energy and current rated
l Fast intrinsic Rectifier
Advantages
l Easy to mount
l Space savings
l High power density
© 2000 IXYS All rights reserved
DataSheet4 U .com
98725 (05/31/00)
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