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PDF IRHMS63164 Data sheet ( Hoja de datos )
| Número de pieza | IRHMS63164 | |
| Descripción | (IRHMS67164 / IRHMS63164) RADIATION HARDENED POWER MOSFET THRU-HOLE | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD-96958
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-254AA)
Product Summary
Part Number Radiation Level
IRHMS67164 100K Rads (Si)
IRHMS63164 300K Rads (Si)
RDS(on)
0.019Ω
0.019Ω
ID
45A*
45A*
IRHMS67164
150V, N-CHANNEL
TECHNOLOGY
International Rectifier’s R6TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm2).
Their combination of very low RDS(on) and faster
switching times reduces power loss and increases
power density in today’s high speed switching
applications such as DC-DC converters and motor
controllers. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, ease of paralleling and temperature stability
of electrical parameters.
Low-Ohmic
TO-254AA
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
45*
44 A
180
208 W
1.67
W/°C
±20 V
353 mJ
45 A
20.8
mJ
8.2
-55 to 150
V/ns
oC
300 (0.063 in. /1.6 mm from case for 10s)
9.3 (Typical)
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
12/22/05
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1 page  
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Pre-Irradiation
IRHMS67164
14000
12000
10000
8000
6000
VGS = 0V, f = 1 MH1z00KHz
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
4000
2000
Crss
0
1
10
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
20
ID = 45A
16
12
VDS = 120V
VDS = 75V
VDS = 30V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 40 80 120 160 200 240 280
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 150°C
TJ = 25°C
10
1.0
0.0
VGS = 0V
0.5 1.0 1.5 2.0 2.5
VSD , Source-to-Drain Voltage (V)
3.0
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µs
1ms
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1 10
10ms
100 1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
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| PDF Descargar | [ Datasheet IRHMS63164.PDF ] | |
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