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NTP30N20 の電気的特性と機能

NTP30N20のメーカーはON Semiconductorです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 NTP30N20
部品説明 Power MOSFET ( Transistor )
メーカ ON Semiconductor
ロゴ ON Semiconductor ロゴ 




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NTP30N20 Datasheet, NTP30N20 PDF,ピン配置, 機能
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NTP30N20
Preferred Device
Power MOSFET
30 Amps, 200 Volts
N−Channel Enhancement−Mode TO−220
Features
Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Avalanche Energy Specified
IDSS and RDS(on) Specified at Elevated Temperature
Typical Applications
PWM Motor Controls
Power Supplies
Converters
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−to−Source Voltage
Drain−to−Source Voltage (RGS = 1.0 M)
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (tpv10 ms)
Drain Current
− Continuous @ TA 25°C
− Continuous @ TA 100°C
− Pulsed (Note 1)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
200
200
"30
"40
30
22
90
214
1.43
Vdc
Vdc
Vdc
Adc
W
W/°C
Operating and Storage Temperature Range
TJ, Tstg
−55 to
+175
°C
Single Drain−to−Source Avalanche Energy −
Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc,
IL(pk) = 20 A, L = 3.0 mH, RG = 25 )
EAS
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
RθJC
RθJA
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10 seconds
TL
1. Pulse Test: Pulse Width = 10 µs, Duty Cycle = 2%.
mJ
450
°C/W
0.7
62.5
260 °C
http://onsemi.com
30 AMPERES
200 VOLTS
68 m@ VGS = 10 V (Typ)
N−Channel
D
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
4
1
2
3
TO−220AB
CASE 221A
STYLE 5
NTP30N20
LLYWW
1
Gate
3
Source
2
Drain
NTP30N20 = Device Code
LL = Location Code
Y = Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
NTP30N20
TO−220AB
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2003
December, 2003 − Rev. 4
DataSheet4 U .com
1
Publication Order Number:
NTP30N20/D

1 Page





NTP30N20 pdf, ピン配列
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NTP30N20
60
VGS = 10 V
6V
50 9 V
TJ = 25°C
40 8 V
7V
30
5V
20
10
4V
0 0 2 4 6 8 10
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
60
VDS 10 V
50
40
30
20
TJ = 25°C
10
TJ = 100°C
TJ = −55°C
00 2 4 6 8
10
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.2
0.15
VGS = 10 V
TJ = 100°C
0.1
0.05
TJ = 25°C
TJ = −55°C
0
5 15 25 35 45 55
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
0.1
0.09
TJ = 25°C
0.08
0.07
VGS = 10 V
VGS = 15 V
0.06
0.05
5
15 25 35 45
ID, DRAIN CURRENT (AMPS)
55
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
3
ID = 15 A
2.5 VGS = 10 V
2
100000
VGS = 0 V
10000
TJ = 175°C
1.5
1
0.5
0
−50 −25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
1000
100
TJ = 100°C
10
20
40 60 80 100 120 140 160 180 200
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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http://onsemi.com
3


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NTP30N20 電子部品, 半導体
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NTP30N20
SAFE OPERATING AREA
1000
100
VGS = 20 V
SINGLE PULSE
TC = 25°C
10 µs
10
1
0.1
0.1
100 µs
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1 ms
10 ms
dc
1.0 10 100 1000
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
500
ID = 30 A
400
300
200
100
0
25 50 75 100 125 150 175
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
1.0
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
SINGLE PULSE
0.01
0.00001
0.0001
P(pk)
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1 READ TIME AT t1
t2 TJ(pk) − TC = P(pk) RθJC(t)
DUTY CYCLE, D = t1/t2
0.001
0.01
t, TIME (µs)
Figure 13. Thermal Response
0.1
1.0
10
IS
tp
di/dt
trr
ta tb
0.25 IS
IS
TIME
Figure 14. Diode Reverse Recovery Waveform
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部品番号部品説明メーカ
NTP30N20

Power MOSFET ( Transistor )

ON Semiconductor
ON Semiconductor


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