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FDS2672 の電気的特性と機能

FDS2672のメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel UltraFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FDS2672
部品説明 N-Channel UltraFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FDS2672 Datasheet, FDS2672 PDF,ピン配置, 機能
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August 2006
FDS2672
N-Channel UltraFET Trench® MOSFET
200V, 3.9A, 70m
Features
General Description
tm
„ Max rDS(on) = 70mat VGS = 10V, ID = 3.9A
„ Max rDS(on) = 80mat VGS = 6V, ID = 3.5A
„ Fast switching speed
„ High performance trench technology for extremely low
rDS(on)
„ RoHS compliant
This single N-Channel MOSFET is produced using
Fairchild Semiconductor’s advanced UItraFET Trench®
process that has been especially tailored to minimize
the on-state resistance and yet maintain superior switching
performance.
Application
„ DC-DC conversion
DD
D
D
SO-8
Pin 1
5
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G
S
S
S
7
8
4
3
2
1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDS Drain to Source Voltage
VGS Gate to Source Voltage
ID
Drain Current -Continuous
-Pulsed
EAS Single Pulse Avalanche Energy
PD
Power Dissipation
Power Dissipation
TJ, TSTG
Operating and Storage Temperature
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
Ratings
200
±20
3.9
50
37.5
2.5
1.0
-55 to 150
Units
V
V
A
mJ
W
°C
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
RθJA
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
(Note 1a)
(Note 1b)
25
50
125
°C/W
Device Marking
FDS2672
Device
FDS2672
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
©2006 Fairchild Semiconductor Corporation
FDS2672 Rev. B
1
www.fairchildsemi.com
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FDS2672 pdf, ピン配列
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Typical Characteristics TJ = 25°C unless otherwise noted
50
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = 10V
40
VGS = 6V
30
VGS = 5V
20
10 VGS = 4.5V
0
0123
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
4
3.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
2.5
VGS = 4.5V
2.0
VGS = 5V
VGS = 6V
1.5
1.0 VGS = 10V
0.5
0 5 10 15 20 25 30 35 40 45 50
ID, DRAIN CURRENT(A)
Figure 2. Normalized On-Resistance vs Drain
Current and Gate Voltage
2.8
ID = 3.9A
VGS = 10V
180
ID = 3.9A PULSE DURATION = 80µs
160 DUTY CYCLE = 0.5%MAX
2.2 140
TJ = 150oC
120
1.6
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1.0 80
0.4
-50
-25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
60
40
3.0
TJ = 25oC
4.5 6.0 7.5 9.0
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 3. Normalized On Resistance vs Junction
Temperature
Figure 4. On-Resistance vs Gate to Source
Voltage
30
PULSE DURATION = 80µs
25 DUTY CYCLE = 0.5%MAX
VDD = 10V
20 TJ = 150oC
15
TJ = 25oC
10
5
TJ = - 55oC
0
23456
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
100
VGS = 0V
10
1 TJ = 150oC
TJ = 25oC
0.1
0.01
TJ = -55oC
1E-3
0.0 0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Source to Drain Diode Forward
Voltage vs Source Current
FDS2672 Rev. B
3 www.fairchildsemi.com
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3Pages


FDS2672 電子部品, 半導体
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TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
ActiveArray™
Bottomless™
FACT Quiet Series™
GlobalOptoisolator™
GTO™
OCX™
OCXPro™
OPTOLOGIC®
SILENT SWITCHER®
SMART START™
SPM™
UniFET™
UltraFET®
VCX™
Build it Now™
CoolFET™
HiSeC™
I2C™
OPTOPLANAR™
PACMAN™
Stealth™
SuperFET™
Wire™
CROSSVOLTi-Lo
POP™
SuperSOT™-3
DOME™
ImpliedDisconnect™ Power247™
SuperSOT™-6
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FAST®
IntelliMAX™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
PowerEdge™
PowerSaver™
PowerTrench®
QFET®
QS™
SuperSOT™-8
SyncFET™
TCM™
TinyBoost™
TinyBuck™
FASTr™
MicroPak™
QT Optoelectronics™ TinyPWM™
FPS™
FRFET™
MICROWIRE™
MSX™
Quiet Series™
RapidConfigure™
TinyPower™
TinyLogic®
MSXPro™
RapidConnect™
TINYOPTO™
Across the board. Around the world.™
The Power Franchise®
μSerDes™
ScalarPump™
TruTranslation™
UHC™
Programmable Active Droop™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In Design
Preliminary
First Production
No Identification Needed
Obsolete
Full Production
Not In Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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Rev. I20

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共有リンク

Link :


部品番号部品説明メーカ
FDS2670

200V N-Channel PowerTrench MOSFET

Fairchild Semiconductor
Fairchild Semiconductor
FDS2672

N-Channel UltraFET

Fairchild Semiconductor
Fairchild Semiconductor


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