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H10NC60FI の電気的特性と機能

H10NC60FIのメーカーはST Microelectronicsです、この部品の機能は「STH10NC60FI」です。


製品の詳細 ( Datasheet PDF )

部品番号 H10NC60FI
部品説明 STH10NC60FI
メーカ ST Microelectronics
ロゴ ST Microelectronics ロゴ 




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H10NC60FI Datasheet, H10NC60FI PDF,ピン配置, 機能
STW10NC60
STH10NC60FI
N-CHANNEL 600V - 0.6- 10A - TO-247/ISOWATT218
PowerMesh™II MOSFET
TYPE
VDSS
RDS(on)
ID
STW10NC60
www.DataSheet4U.cSoTmH10NC60FI
600 V
600 V
< 0.75 10 A
< 0.75 10 A (*)
s TYPICAL RDS(on) = 0.6
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESHII is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
3
2
1
TO-247
3
2
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
VGS
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 k)
Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM (1)
PTOT
Drain Current (pulsed)
Total Dissipation at TC = 25°C
Derating Factor
dv/dt
Peak Diode Recovery voltage slope
VISO
Tstg
Tj
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
.
February 2002
Value
STW10NC60 STH10NC60FI
600
600
±30
10 10 (*)
6.3 6.3 (*)
40 40 (*)
160 60
1.28 0.48
3.5
- 2500
Unit
V
V
V
A
A
A
W
W/°C
V/ns
V
– 55 to 150
°C
(1)ISD 10A, di/dt 100A/µs, VDD V(BR)DSS, Tj TJMAX
(*) Limited only by Maximum Temperature Allowed
1/9

1 Page





H10NC60FI pdf, ピン配列
STW10NC60 / STH10NC60FI
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
td(on)
Turn-on Delay Time
tr Rise Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd
www.DataSheet4U.com
Gate-Drain Charge
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 300V, ID = 4.5 A
RG = 4.7VGS = 10V
(see test circuit, Figure 3)
VDD = 480V, ID = 9.0 A,
VGS = 10V
Min.
Typ.
20
16
55
4.5
31
Max.
Unit
ns
ns
77 nC
nC
nC
Test Conditions
VDD = 300 V, ID = 4.5 A
RG = 4.7VGS = 10 V
(Resistive Load see, Figure 3)
VDD = 480V, ID = 9.0 A,
RG = 4.7Ω, VGS = 10V
(Inductive Load see, Figure 5)
Min.
Typ.
64
32
19
13
32
Max.
Unit
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 9 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 9 A, di/dt = 100A/µs,
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Min.
Typ.
600
4.7
15.5
Max.
10
40
1.6
Unit
A
A
V
ns
µC
A
Safe Operating Area for TO-247
Safe Operating Area for ISOWATT218
3/9


3Pages


H10NC60FI 電子部品, 半導体
STW10NC60 / STH10NC60FI
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
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Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/9

6 Page



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部品番号部品説明メーカ
H10NC60FI

STH10NC60FI

ST Microelectronics
ST Microelectronics


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