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PDF IXGH20N60 Data sheet ( Hoja de datos )

Número de pieza IXGH20N60
Descripción (IXGH20N60 / IXGM20N60) Low VCE(sat) IGBT
Fabricantes IXYS Corporation 
Logotipo IXYS Corporation Logotipo



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Low VCE(sat) IGBT
High speed IGBT
IXGH/IXGM 20 N60
IXGH/IXGM 20 N60A
VCES
600 V
600 V
IC25
40 A
40 A
VCE(sat)
2.5 V
3.0 V
Symbol
Test Conditions
Maximum Ratings
VCES
V
CGR
VGES
V
GEM
IC25
IC90
I
CM
SSOA
(RBSOA)
P
C
TJ
TJM
T
stg
Md
Weight
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GE
=
1
M
Continuous
Transient
600 V
600 V
±20 V
±30 V
TC = 25°C
TC = 90°C
T
C
= 25°C, 1 ms
VGE= 15 V, TVJ = 125°C, RG = 82
Clamped inductive load, L = 100 µH
40
20
80
ICM = 40
@ 0.8 VCES
T
C
= 25°C
DataSheet4U.com150
-55 ... +150
150
-55 ... +150
A
A
A
A
W
°C
°C
°C
Mounting torque (M3)
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300 °C
Symbol
BV
CES
VGE(th)
ICES
I
GES
V
CE(sat)
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
I
C
=
250
µA,
V
GE
=
0
V
IC = 250 µA, VCE = VGE
VCE = 0.8 • VCES
V =0V
GE
V
CE
=
0
V,
V
GE
=
±20
V
I = I , V = 15 V
C C90 GE
TJ = 25°C
T
J
=
125°C
20N60
20N60A
600
2.5
V
5V
200 µA
1 mA
±100 nA
2.5 V
3.0 V
TO-247 AD (IXGH)
G
C
E
TO-204 AE (IXGM)
DataShee
G = Gate,
E = Emitter,
C
C = Collector,
TAB = Collector
Features
l International standard packages
l 2nd generation HDMOSTM process
l Low V
CE(sat)
- for low on-state conduction losses
l High current handling capability
l MOS Gate turn-on
- drive simplicity
l Voltage rating guaranteed at high
temperature (125°C)
Applications
l AC motor speed control
l DC servo and robot drives
l DC choppers
l Uninterruptible power supplies (UPS)
l Switch-mode and resonant-mode
power supplies
Advantages
l Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
l High power density
DataSheet4U.com
© 1996 IXYS All rights reserved
91511F (3/96)

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