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PDF STD6NC40 Data sheet ( Hoja de datos )
| Número de pieza | STD6NC40 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STD6NC40
N-CHANNEL 400V - 0.75Ω - 5A - DPAK / IPAK
PowerMesh™II MOSFET
TYPE
VDSS
RDS(on)
ID
STD6NC40
400V
<1Ω
5A
s TYPICAL RDS(on) = 0.75Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s GATE CHARGE MINIMIZED
s ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
s ADD SUFFIX “-1” FOR ORDERING IN IPAK
3
1
DPAK
3
2
1
IPAK
DESCRIPTION
The PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
INTERNAL SCHEMATIC DIAGRAM
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APPLICATIONS
s SWITH MODE LOW POWER SUPPLIES
(SMPS)
s CFL
DataShee
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (s) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
March 2001
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Value
Unit
400 V
400 V
±30 V
5A
3A
20 A
55 W
0.44 W/°C
3 V/ns
–65 to 150
°C
150
(1)ISD ≤5A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
°C
1/9
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Normalized Gate Threshold Voltage vs
Temperature
STD6NC40
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
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5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet STD6NC40.PDF ] | |
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