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P3NB80FP データシート PDF ( 特性, スペック, ピン接続図 )

部品番号 P3NB80FP
部品説明 STP3NB80FP
メーカ ST Microelectronics
ロゴ ST Microelectronics ロゴ 

Total 9 pages
		

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P3NB80FP Datasheet, P3NB80FP PDF,ピン配置, 機能
U.comwww.DataSheet4U.com
eet4®
STP3NB80
STP3NB80FP
ShN - CHANNEL 800V - 4.6- 2.6A - TO-220/TO-220FP
ata PowerMESHMOSFET
w.DTYPE
w STP3NB80
w STP3NB80FP
VDSS
800 V
800 V
RDS(on)
< 6.5
< 6.5
ID
2.6 A
2.6 A
s TYPICAL RDS(on) = 4.6
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
ms VERY LOW INTRINSIC CAPACITANCES
os GATE CHARGE MINIMIZED
.cDESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
Uadvanced family of power MOSFETs with
t4outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
elowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
eand switching characteristics.
hAPPLICATIONS
Ss HIGH CURRENT, HIGH SPEED SWITCHING
s UNINTERRUPTIBLE POWER SUPPLY(UPS)
tas DC-DC & DC-AC CONVERTERS FOR
TELECOM, INDUSTRIAL AND CONSUMER
aENVIRONMENT
.DABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
wVDS
wVDGR
VGS
wID
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
Value
STP3NB80 STP3NB80FP
800
800
± 30
2.6 2.6 (••)
Unit
V
V
V
A
ID Drain Current (continuous) at Tc = 100 oC
IDM() Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
(••) Limited only by maximum temperature allowed
January 1999
1.6 1.6 (••)
m10.4
10.4
.co90 35
0.72
0.28
t4U4.5
e2000
e-65 to 150
h150
S(1) ISD 2.6 A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMA
A
A
W
W/oC
V/ns
V
oC
oC
www.Data 1/9

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