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H8236-40 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 H8236-40
部品説明 HPD (HYBRID PHOTO-DETECTOR) MODULES
メーカ Hamamatsu Corporation
ロゴ Hamamatsu Corporation ロゴ 

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H8236-40 Datasheet, H8236-40 PDF,ピン配置, 機能
PRELIMINARY DATA
OCT. 2000
HPD (HYBRID PHOTO-DETECTOR) MODULES
H8236-07, -40
The HPD (Hybrid Photo-Detector) is a new vacuum photo-detector including a photocathode
and an avalanche diode. The HPD provides a gain of more than 1000 in a single multiplication
process called 'electron bombardment multiplication'. The photoelectrons from the photo-
cathode are accelerated by a strong electric field to hit the avalanche diode and release a
large number of electron-hole pairs corresponding to the acceleration energy. This excellent
first multiplication process enables the HPD to achieve excellent multi-photon energy resolu-
tion. This first multiplication process is followed by the second avalanche mode multiplication
to provide sufficient gain for a variety of applications.
H8236 is an HPD module, containing high voltage power supplies and a pre-amplifier.
PATENT PENDING
FEATURES
q Able to discriminate multi-photon events
q Low excess noise
q High Q.E. from 450 nm to 650 nm (H8236-40)
q Simple operation
Built-in high voltage power supply and pre-amplifier
q Low after pulse
APPLICATIONS
q Photon counting application
q Low intensity pulse detection
q Laser scanning microscope
q Particle counter
SPECIFICATIONS
Parameter
Spectral Response
Peak Sensitivity Wavelength
Photocathode Material
Quantum Efficiency E
Effective Area
Sensitivity A
Bandwidth
Signal Output
Input Power/Current
Recommended Control
Voltage Range
Signal Connector
Control Connector
Weight
Offset (Typ.)
Noise r.m.s. (Typ.)
Load
AC coupled
Impedance DC coupled
Maximum Voltage
Polarity
To Pre-amplifier (PIN 2)
To Diode Bias Power Supply (PIN 4)
To High Voltage (PIN 8)
To Diode Bias Voltage (PIN 6)
H8236-07
H8236-40
160 to 850
350 to 720
420 550
Multialkali
GaAsP(Cs)
15 40
85
0.2 E
0.7 E
6 mV/1 photoelectron
DC to 3.5 MHz
-0.7
1
more than 50
more than 5
-5
Negative
-12 V dc/6 mA
+12 V dc/50 mA
+3 to +8 B
+3.5 to +7.6 CD
BNC-R
12-pin connector (Hirose: HR10A-10R-12P)
Approx. 370
Unit
nm
nm
%
mm Min.
V/nW
V dc
mV
k
V Max.
V dc
V dc
g
MAXIMUM RATINGS (Absolute Maximum Value)
Input Power
PIN 2
PIN 4
Control Voltage
PIN 8
PIN 6
Operating Ambient Temperature
Operating Humidity
Average Input Light Power E
Peak Input Light Power EG
-12.5
+16
+8.5
D
0 to +40
90 F
41
380 105
V dc
V dc
V dc
°C
%RH
nW
nW
NOTE: A at 8 V (or set the HV knob to -8 kV on the front panel of the HPD module power supply C8237) to PIN 8 and 7.5 V (or set the C8237 diode bias
voltage to +150 V) to PIN 6
B or "-3 kV" to "-8 kV" high voltage on the C8237 front panel
C or "70 V" to "152 V" diode bias voltage on the C8237 front panel
D The characteristics of the bias voltage vs. avalanche gain curve of the diode inside are affected by the ambient temperature conditions, and even
under the same ambient temperature conditions resulting curve may differ between diodes from different production lots. Refer to the individual
data sheet attached to the module. E at peak sensitivity wavelength
F without moisture condensation
G at 3 V (or set the C8237 HV knob to -3 kV) to PIN 8 and 7.5 V (or set the C8237 diode bias voltage to +150 V) to PIN 6. Input light pulse: 50 ns
(FWHM), 200 kHz.
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2000 Hamamatsu Photonics K.K

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