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AOT426 の電気的特性と機能

AOT426のメーカーはAlpha & Omega Semiconductorsです、この部品の機能は「N-Channel Enhancement Mode Field Effect Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 AOT426
部品説明 N-Channel Enhancement Mode Field Effect Transistor
メーカ Alpha & Omega Semiconductors
ロゴ Alpha & Omega Semiconductors ロゴ 




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AOT426 Datasheet, AOT426 PDF,ピン配置, 機能
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AOT426
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOT426 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
Product AOT426 is Pb-free (meets ROHS & Sony
259 specifications). AOT426L is a Green Product
ordering option. AOT426 and AOT426L are
electrically identical.
TO-220
Features
VDS (V) = 30V
ID = 85A
RDS(ON) < 6m(VGS = 10V)
RDS(ON) < 11m(VGS = 4.5V)
D
G
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S
G DS
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
ID
IDM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±20
85
62.5
200
30
45
75
37.5
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
Steady-State
Steady-State
Symbol
RθJC
Typ
40
1.3
Max
50
2
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
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Alpha & Omega Semiconductor, Ltd.
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AOT426 pdf, ピン配列
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AOT426
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
90
80
70
60
50
40
30
20
10
0
0
5V
10V
4.5V
4V
3.5V
VGS=3V
1234
VDS (Volts)
Fig 1: On-Region Characteristics
5
60
VDS=5V
50
40
125°C
30
20
10
0
2
255°C.5
6.6
9.5
2.5 3 3.5 4
VGS(Volts)
Figure 2: Transfer Characteristics
4.5
12 1.8
et4U.com
10 VGS=4.5V
8
1.6 VGS=10V
ID=20A
1.4
6
VGS=10V
1.2
VGS=4.5V
4
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ID=20A
2
0 10 20 30 40 50 60
ID (A)
0.8
0
25 50 75 100 125 150 175
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
20
ID=30A
16
12
125°C
8
25°C
4
0
2 4 6 8 10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
125°C
25°C
1.0E-03
1.0E-04
1.0E-05
0.0
0.2 0.4 0.6 0.8 1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
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Alpha & Omega Semiconductor, Ltd.
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共有リンク

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部品番号部品説明メーカ
AOT424

N-Channel Enhancement Mode Field Effect Transistor

Alpha & Omega Semiconductors
Alpha & Omega Semiconductors
AOT426

N-Channel Enhancement Mode Field Effect Transistor

Alpha & Omega Semiconductors
Alpha & Omega Semiconductors
AOT428

N-Channel Enhancement Mode Field Effect Transistor

Alpha & Omega Semiconductors
Alpha & Omega Semiconductors


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