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G03H1202のメーカーはInfineonです、この部品の機能は「High Speed 2-Technology」です。 |
部品番号 | G03H1202 |
| |
部品説明 | High Speed 2-Technology | ||
メーカ | Infineon | ||
ロゴ | |||
このページの下部にプレビューとG03H1202ダウンロード(pdfファイル)リンクがあります。 Total 11 pages
www.DataSheet4U.com
IGA03N120H2
HighSpeed 2-Technology
• Designed for:
- TV – Horizontal Line Deflection
• 2nd generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Eoff optimized for IC =3A
- simple Gate-Control
C
G
E
P-TO220-3-31
(FullPAK)
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
P-TO220-3-34
(FullPAK)
Type
VCE
IC
Eoff
Tj,max
Marking
Package
Ordering Code
IGA03N120H2 1200V 3A 0.15mJ 150°C G03H1202 P-TO-220-3-31 Q67040-S4648
IGA03N120H2 1200V 3A 0.15mJ 150°C G03H1202 P-TO-220-3-34 Q67040-S4654
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DataSheet4U.comVC E
Triangular collector peak current (VGS = 15V)
ICpk
TC = 100°C, f = 32kHz
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
ICpuls
-
VCE ≤ 1200V, Tj ≤ 150°C
Gate-emitter voltage
VGE
Power dissipation
Ptot
TC = 25°C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Tj , Tstg
-
Value
1200
8.2
9
9
±20
29
-40...+150
260
Unit
V
A
V
W
°C
DataShee
DataSheet4U.com
Power Semiconductors
DataSheet4 U .com
1
Mar-04, Rev. 2.0
1 Page www.DataSheet4U.com
IGA03N120H2
et4U.com
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=25°C
VCC=800V, IC=3A
VGE=0V/15V
RG=82Ω
L σ 1) = 1 8 0 n H
Cσ1)=40pF
Energy losses include
“tail” and diode 2)
reverse recovery.
min.
-
-
-
-
-
-
-
Value
Typ.
9.2
5.2
281
29
0.14
0.15
0.29
Unit
max.
- ns
-
-
-
- mJ
-
-
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
Tj=150°C
tr VCC=800V, IC=3A
td(of
tf
Eon
Eoff
f
)DataSVRhGGeE=e=8t402UVΩ./c1o5mV
Lσ1)=180nH
Cσ1)=40pF
Energy losses
include
E t s “tail” and diode2)
reverse recovery.
min.
-
-
-
-
-
-
-
Value
Typ.
9.4
6.7
340
63
0.22
0.26
0.48
Unit
max.
- ns
-
-
-
- mJ
-
-
Switching Energy ZVT, Inductive Load
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-off energy
Eoff VCC=800V, IC=3A
VGE=0V/15V
RG=82Ω, Cr1)=4nF
Tj=25°C
Tj=150°C
min.
-
-
Value
typ.
0.05
0.09
Unit
max.
mJ
-
-
DataShee
DataSheet4U.com1
2
)
)
Leakage inductance Lσ and stray capacity Cσ due
Commutation diode from device IKP03N120H2
to
dynamic
test
circuit
in
figure
E
Power Semiconductors
DataSheet4 U .com
3
Mar-04, Rev. 2.0
3Pages www.DataSheet4U.com
IGA03N120H2
et4U.com
1000ns
100ns
td(off)
tf
10ns
td(on)
1000ns
td(off)
100ns
10ns
tf
td(on)
1ns
0A
tr
2A
4A
1ns
0Ω
tr
50Ω
100Ω
150Ω
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 9. Typical switching times as a
Figure 10. Typical switching times as a
function of collector current
function of gate resistor
(inductive load, Tj = 150°C,
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, RG = 82Ω,
VCE = 800V, VGE = +15V/0V, IC = 3A,
dynamic test circuit in Fig.E)
dynamic test circuit in Fig.E)
DataSheet4U.com
1000ns
td(off)
100ns
tf
10ns
td(on)
tr
1ns
25°C 50°C 75°C 100°C 125°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 800V,
VGE = +15V/0V, IC = 3A, RG = 82Ω,
dynamic test circuit in Fig.E)
DataSheet4U.com
5V
4V
3V max.
typ.
2V
m in.
1V
0V
-50°C
0°C
50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(IC = 0.09mA)
Power Semiconductors
DataSheet4 U .com
6
Mar-04, Rev. 2.0
DataShee
6 Page | |||
ページ | 合計 : 11 ページ | ||
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部品番号 | 部品説明 | メーカ |
G03H1202 | High Speed 2-Technology | Infineon |