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G03H1202 の電気的特性と機能

G03H1202のメーカーはInfineonです、この部品の機能は「High Speed 2-Technology」です。


製品の詳細 ( Datasheet PDF )

部品番号 G03H1202
部品説明 High Speed 2-Technology
メーカ Infineon
ロゴ Infineon ロゴ 




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G03H1202 Datasheet, G03H1202 PDF,ピン配置, 機能
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IGA03N120H2
HighSpeed 2-Technology
Designed for:
- TV – Horizontal Line Deflection
2nd generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Eoff optimized for IC =3A
- simple Gate-Control
C
G
E
P-TO220-3-31
(FullPAK)
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
P-TO220-3-34
(FullPAK)
Type
VCE
IC
Eoff
Tj,max
Marking
Package
Ordering Code
IGA03N120H2 1200V 3A 0.15mJ 150°C G03H1202 P-TO-220-3-31 Q67040-S4648
IGA03N120H2 1200V 3A 0.15mJ 150°C G03H1202 P-TO-220-3-34 Q67040-S4654
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DataSheet4U.comVC E
Triangular collector peak current (VGS = 15V)
ICpk
TC = 100°C, f = 32kHz
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
ICpuls
-
VCE 1200V, Tj 150°C
Gate-emitter voltage
VGE
Power dissipation
Ptot
TC = 25°C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Tj , Tstg
-
Value
1200
8.2
9
9
±20
29
-40...+150
260
Unit
V
A
V
W
°C
DataShee
DataSheet4U.com
Power Semiconductors
DataSheet4 U .com
1
Mar-04, Rev. 2.0

1 Page





G03H1202 pdf, ピン配列
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IGA03N120H2
et4U.com
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=25°C
VCC=800V, IC=3A
VGE=0V/15V
RG=82
L σ 1) = 1 8 0 n H
Cσ1)=40pF
Energy losses include
“tail” and diode 2)
reverse recovery.
min.
-
-
-
-
-
-
-
Value
Typ.
9.2
5.2
281
29
0.14
0.15
0.29
Unit
max.
- ns
-
-
-
- mJ
-
-
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
Tj=150°C
tr VCC=800V, IC=3A
td(of
tf
Eon
Eoff
f
)DataSVRhGGeE=e=8t402UV./c1o5mV
Lσ1)=180nH
Cσ1)=40pF
Energy losses
include
E t s “tail” and diode2)
reverse recovery.
min.
-
-
-
-
-
-
-
Value
Typ.
9.4
6.7
340
63
0.22
0.26
0.48
Unit
max.
- ns
-
-
-
- mJ
-
-
Switching Energy ZVT, Inductive Load
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-off energy
Eoff VCC=800V, IC=3A
VGE=0V/15V
RG=82, Cr1)=4nF
Tj=25°C
Tj=150°C
min.
-
-
Value
typ.
0.05
0.09
Unit
max.
mJ
-
-
DataShee
DataSheet4U.com1
2
)
)
Leakage inductance Lσ and stray capacity Cσ due
Commutation diode from device IKP03N120H2
to
dynamic
test
circuit
in
figure
E
Power Semiconductors
DataSheet4 U .com
3
Mar-04, Rev. 2.0


3Pages


G03H1202 電子部品, 半導体
www.DataSheet4U.com
IGA03N120H2
et4U.com
1000ns
100ns
td(off)
tf
10ns
td(on)
1000ns
td(off)
100ns
10ns
tf
td(on)
1ns
0A
tr
2A
4A
1ns
0
tr
50
100
150
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 9. Typical switching times as a
Figure 10. Typical switching times as a
function of collector current
function of gate resistor
(inductive load, Tj = 150°C,
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, RG = 82,
VCE = 800V, VGE = +15V/0V, IC = 3A,
dynamic test circuit in Fig.E)
dynamic test circuit in Fig.E)
DataSheet4U.com
1000ns
td(off)
100ns
tf
10ns
td(on)
tr
1ns
25°C 50°C 75°C 100°C 125°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 800V,
VGE = +15V/0V, IC = 3A, RG = 82,
dynamic test circuit in Fig.E)
DataSheet4U.com
5V
4V
3V max.
typ.
2V
m in.
1V
0V
-50°C
0°C
50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(IC = 0.09mA)
Power Semiconductors
DataSheet4 U .com
6
Mar-04, Rev. 2.0
DataShee

6 Page



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部品番号部品説明メーカ
G03H1202

High Speed 2-Technology

Infineon
Infineon


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