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DIM100PHM33-F000 の電気的特性と機能

DIM100PHM33-F000のメーカーはDynex Semiconductorです、この部品の機能は「IGBT Power Module」です。


製品の詳細 ( Datasheet PDF )

部品番号 DIM100PHM33-F000
部品説明 IGBT Power Module
メーカ Dynex Semiconductor
ロゴ Dynex Semiconductor ロゴ 




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DIM100PHM33-F000 Datasheet, DIM100PHM33-F000 PDF,ピン配置, 機能
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DIM100PHM33-F000
FEATURES
I Soft Punch Through Silicon
I 10µs Short Circuit Withstand
I Isolated MMC Base with AlN Substrates
I High Thermal Cycling Capability
DIM100PHM33-F000
Half Bridge IGBT Module
KEY PARAMETERS
VCES
3300V
VCE(sat) *
(typ)
2.8V
IC
(max)
100A
IC(PK)
(max)
200A
* Measured at auxiliary terminals.
PDS5764-1.1 April 2004
APPLICATIONS
I High Reliability Inverters
I Motor Controllers
1(E1/C2)
2(C1)
3(E2)
I Traction Auxiliaries
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
The DIM100PHM33-F000 is a half bridge 3300V sDoafttapSunhcehet4U.com
through, n channel enhancement mode, insulated gate bipolar
transistor (IGBT) module. The IGBT has a wide reverse bias safe
operating area (RBSOA) plus full 10µs short circuit withstand.
This device is optimised for traction drives and other applications
requiring high thermal cycling capability.
5(E1)
4(G1)
8(C1)
7(E2)
6(G2)
Fig. 1 Half bridge circuit diagram
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
DataShee
ORDERING INFORMATION
Order As:
DIM100PHM33-F000
Note: When ordering, please use the whole part number.
Outline type code: P
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM100PHM33-F000 pdf, ピン配列
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DIM100PHM33-F000
THERMAL AND MECHANICAL RATINGS
Internal insulation material: AlN
Baseplate material:
AlSiC
Creepage distance:
33mm
Clearance:
20mm
CTI (Critical Tracking Index): 175
Symbol
Parameter
Test Conditions
Rth(j-c)
Thermal resistance - transistor (per switch) Continuous dissipation -
junction to case
Rth(j-c)
Thermal resistance - diode (per switch)
Continuous dissipation -
junction to case
Rth(c-h)
Thermal resistance - case to heatsink
(per module)
Mounting torque 5Nm
(with mounting grease)
Tj Junction temperature
Transistor
Diode
et4U.com
Tstg
-
Storage temperature range
Screw torque
DataSheet4U.com
Mounting - M6
-
Electrical connections - M5
Min. Typ. Max. Units
- - 96 ˚C/kW
- - 192 ˚C/kW
- - 16 ˚C/kW
- - 150 ˚C
- - 125 ˚C
–40 - 125 ˚C
- - 5 NmDataShee
- - 4 Nm
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
DataSheewt4wU.wco.mdynexsemi.com
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3Pages


DIM100PHM33-F000 電子部品, 半導体
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DIM100PHM33-F000
TYPICAL CHARACTERISTICS
200
Common emitter
Tcase = 25˚C
Vce is measured at power
busbars and not the
auxiliary terminals
150
200
Common emitter
Tcase = 125˚C
Vce is measured at power
busbars and not the
auxiliary terminals
150
100 100
50
0
0.0
et4U.com
50
VGE = 10V
VGE = 12V
VGE = 15V
VGE = 20V
1.0 2.0 3.0 4.0 5.0 6.0
VGE = 10V
VGE = 12V
VGE = 15V
VGE = 20V
0
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
Collector-emitter voltage, Vce - (V)
Collector-emitter voltage, Vce - (V)
Fig. 3 Typical output characteristics DataSheet4U.com Fig. 4 Typical output characteristics
DataShee
200
Conditions:
Tc = 125˚C,
Rg(on) = 16.5 Ohms,
Rg(off) = 33 Ohms
Cge = 33nF,
150
Vcc = 1800V,
Vge = ±15V
100
700
Conditions:
Tc = 125˚C,
IC = 100A,
600 Vcc = 1800V,
Cge = 33nF,
Vge = ±15V
500
400
300
Eon (mJ)
Eoff (mJ)
Erec (mJ)
50
Eon (mJ)
Eoff (mJ)
Erec (mJ)
0
0 10 20 30 40 50 60 70 80 90 100
Collector current, IC - (A)
Fig. 5 Typical switching energy vs collector current
200
100
0
0 16 32 48 64 80 96 112
Gate resistance, Rg - (ohms)
Fig. 6 Typical switching energy vs gate resistance
6/9
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
DataSheet4 U .com

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部品番号部品説明メーカ
DIM100PHM33-F000

IGBT Power Module

Dynex Semiconductor
Dynex Semiconductor


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